Light fixture using near UV solid state device and remote semiconductor nanophosphors to produce white light

ABSTRACT

For general lighting applications, a semiconductor chip produces near ultraviolet (UV) electromagnetic energy in a range of 380-420 nm, e.g. 405 nm. Semiconductor nanophosphors, typically doped semiconductor nanophosphors, are remotely positioned in an optic of a light fixture. Each phosphor is of a type or configuration that when excited by energy in the 380-420 nm range, emits light of a different spectral characteristic. The nanophosphors together produce light in the fixture output that is at least substantially white and has a color rendering index (CRI) of 75 or higher. In some examples, the fixture optic includes an optical integrating cavity. In the examples using doped semiconductor nanophosphors, the visible white light output exhibits a color temperature in one of the following ranges along the black body curve: 2,725±145° Kelvin; 3,045±175° Kelvin; 3,465±245° Kelvin; and 3,985±275° Kelvin.

This application is a Continuation of U.S. patent application Ser. No.12/629,614, filed on Dec. 2, 2009, now U.S. Pat. No. 7,845,825, thedisclosure of which is incorporated by reference herein.

TECHNICAL FIELD

The present subject matter relates to techniques, fixtures and systemsto produce perceptible white light of a desirable color, for examplegeneral lighting applications, using energy in a range of 380-420 nm topump semiconductor nanophosphors for converting such energy into visiblewhite light, with a color rendering index (CRI) of 75 or higher, and forexample exhibiting a color temperature in one of several specificdisclosed regions along the black body curve which provide a desirablequality of white light for general lighting applications and the like.

BACKGROUND

As costs of energy increase along with concerns about global warming dueto consumption of fossil fuels to generate energy, there is an everyincreasing need for more efficient lighting technologies. These demands,coupled with rapid improvements in semiconductors and relatedmanufacturing technologies, are driving a trend in the lighting industrytoward the use of light emitting diodes (LEDs) or other solid statelight sources to produce light for general lighting applications, asreplacements for incandescent lighting and eventually as replacementsfor other older less efficient light sources.

The actual solid state light sources, however, produce light of specificlimited spectral characteristics. To obtain white light of a desiredcharacteristic and/or other desirable light colors, one approach usessources that produce light of two or more different colors orwavelengths and one or more optical processing elements to combine ormix the light of the various wavelengths to produce the desiredcharacteristic in the output light. In recent years, techniques havealso been developed to shift or enhance the characteristics of lightgenerated by solid state sources using phosphors, including forgenerating white light using LEDs. Phosphor based techniques forgenerating white light from LEDs, currently favored by LEDmanufacturers, include UV or Blue LED pumped phosphors. In addition totraditional phosphors, semiconductor nanophosphors have been used morerecently. The phosphor materials may be provided as part of the LEDpackage (on or in close proximity to the actual semiconductor chip), orthe phosphor materials may be provided remotely (e.g. on or inassociation with a macro optical processing element such as a diffuseror reflector outside the LED package). The remote phosphor basedsolutions have advantages, for example, in that the colorcharacteristics of the fixture output are more repeatable, whereassolutions using sets of different color LEDs and/or lighting fixtureswith the phosphors inside the LED packages tend to vary somewhat inlight output color from fixture to fixture, due to differences in thelight output properties of different sets of LEDs (due to laxmanufacturing tolerances of the LEDs).

Although these solid state lighting technologies have advancedconsiderably in recent years, there is still room for furtherimprovement. For example, there is always a need for techniques to stillfurther improve efficiency of solid state lighting fixtures or systems,to reduce energy consumption. Also, for general lighting applications,it is desirable to consistently provide light outputs of acceptablecharacteristics (e.g. white light of a desired color rendering indexand/or color temperature) in a consistent repeatable manner from onefixture to the next.

SUMMARY

The teachings herein provide further improvements over the existingtechnologies for providing light that is at least substantially whiteand address one or more of the stated needs. A semiconductor chipproduces electromagnetic energy in a range of 380-420 nm, e.g. 405 nmwhich is in the near ultraviolet (UV). Remote semiconductornanophosphors, typically doped semiconductor nanophosphors, are remotelypositioned in an optic of a light fixture so as to be excited by thisenergy. Each phosphor is of a type or configuration such that whenexcited by energy in the 380-420 nm range, the semiconductornanophosphors together produce light in the fixture output that is atleast substantially white and has a color rendering index (CRI) of 75 orhigher. In some examples, the fixture optic includes an opticalintegrating cavity. In several examples using doped semiconductornanophosphors, output exhibits a color temperature in one of thefollowing ranges along the black body curve: 2,725±145° Kelvin;3,045±175° Kelvin; 3,465±245° Kelvin; and 3,985±275° Kelvin.

An example of a light fixture for a lighting application might include anear ultraviolet (UV) solid state source, containing a semiconductorchip for producing near UV electromagnetic energy in a range of 380-420nm, and a macro optic outside and coupled to the near UV solid statesource, for receiving and processing the near UV electromagnetic energyto produce a light output for the fixture. This fixture also includes aplurality of remote doped semiconductor nanophosphors associated withthe macro optic and apart from the semiconductor chip. Each of theremote doped semiconductor nanophosphors is of a type excited inresponse to near UV electromagnetic energy in the range of 380-420 nmfrom the solid state source. Each of the remote doped semiconductornanophosphors is of a type for re-emitting visible light of a differentspectrum, having little or no overlap with absorption spectra of thenanophosphors. The remote doped semiconductor nanophosphors togetherproduce visible light in the output for the fixture from the optic whenexcited.

The visible light in the output for the fixture produced by the near UVexcitation of the remote doped semiconductor nanophosphors is at leastsubstantially white. The visible light in the output for the fixtureproduced by the near UV excitation of the remote doped semiconductornanophosphors has a color rendering index (CRI) of 75 or higher. Also,the visible light in the output for the fixture produced by near UVexcitation of the remote doped semiconductor nanophosphors has a colortemperature of one of the following ranges: 2,725±145° Kelvin;3,045±175° Kelvin; 3,465±245° Kelvin; and 3,985±275° Kelvin.

In specific examples, the semiconductor chip of the near UV solid statesource is configured for producing electromagnetic energy of 405 nm. Theremote phosphors include a doped semiconductor nanophosphor of a typeexcited in response to near UV electromagnetic energy in the range of380-420 nm for re-emitting orange light; a doped semiconductornanophosphor of a type excited in response to near UV electromagneticenergy in the range of 380-420 nm for re-emitting blue light; and adoped semiconductor nanophosphor of a type excited in response to nearUV electromagnetic energy in the range of 380-420 nm for re-emittinggreen light. In such a case, the visible light output produced duringthe near UV excitation of the doped semiconductor nanophosphors has aCRI of at least 80. A semiconductor nanophosphor of a type forre-emitting yellowish-green or greenish-yellow light may be added tofurther increase the CRI.

In another example, the remote doped semiconductor nanophosphors includered, green, blue and yellow emitting nanophosphors, excited in responseto near UV electromagnetic energy in the range of 380-420 nm. In such acase, the visible light output produced during the near UV excitation ofthe doped semiconductor nanophosphors has a CRI of at least 88.

The near UV pumping of semiconductor nanophosphors to produce highquality white light can be implemented in a wide variety of differentlight fixture configurations. Several fixture structures are disclosedin the detailed description, by way of examples. In several cases, theoptic of the fixture provides an optical integrating cavity.

From a somewhat different perspective, the present application disclosesa light fixture for a general lighting application, which includes nearultraviolet (UV) solid state source, each containing a semiconductorchip for producing near UV electromagnetic energy in a range of 380-420nm. A reflector has at least one reflective surface forming an opticalintegrating cavity. A light transmissive structure fills the opticalintegrating cavity, at least substantially. A portion of a surface ofthe light transmissive solid forms an optical aperture of the opticalintegrating cavity to allow emission of light from the cavity for alight output of the device. The light transmissive structure is coupledto the solid state sources to receive the near UV electromagnetic energyfrom the solid state sources, in a manner such that at leastsubstantially all direct emissions from the semiconductor chips reflectat least once within the cavity. The fixture also includes a materialassociated with the light transmissive structure and apart from thesemiconductor chips to receive electromagnetic energy from thesemiconductor chips, which includes a plurality of semiconductornanophosphors. Each of the semiconductor nanophosphors is of a typeexcited in response to near UV electromagnetic energy in the range of380-420 nm from the solid state source. Each of the semiconductornanophosphors is of a type for re-emitting visible light of a differentspectrum having little or no overlap with absorption ranges of thenanophosphors. The semiconductor nanophosphors together produce visiblelight in the output for the fixture from the cavity aperture whenexcited. The visible light output for the fixture from the cavityproduced by the excitation of the semiconductor nanophosphors is atleast substantially white and has a color rendering index (CRI) of 75 orhigher.

In a specific example, the semiconductor nanophosphors are dopedsemiconductor nanophosphors, such as the types discussed above. Such afixture implementation can produce white light in one of the fourspecified color temperature ranges. The solid state source may bepositioned and oriented relative to the light transmissive structure sothat any near UV electromagnetic energy reaching the optical aperturesurface of the light transmissive structure directly from the solidstate source impacts the optical aperture surface at a sufficientlysmall angle as to be reflected back into the optical integrating cavityby total internal reflection at the optical aperture surface of thelight transmissive structure.

In the fixture examples using a cavity and a light transmissivestructure filling the structure, the material containing thenanophosphors may be deployed in a variety of different ways/locations.For example, the material containing the semiconductor nanophosphors maybe located at or near the optical aperture surface of the lighttransmissive structure. In another example, a portion of the volume ofthe light transmissive structure contains the material containing thesemiconductor nanophosphors. Several containment techniques aredisclosed. For example, if the material is a liquid, the semiconductornanophosphors are dispersed in the liquid, and the liquid is containedwithin the light transmissive structure.

The near UV pumping of remotely deployed semiconductor nanophosphorsprovides a relatively efficient mechanism to produce the desired whitelight output. Details of several of the remote semiconductornanophosphor examples may further improve the efficiency of the lightgeneration, at the fixture level. The selection of the parameters of theUV energy for pumping the semiconductor nanophosphors, and the selectionof the phosphors to emit light having CRI in the specified range and acolor temperature in one of the particular ranges provides white lightthat is highly useful, desirable and acceptable, particularly for manygeneral lighting applications. Where the phosphors are provided remotelyin the fixture, the white light characteristic tends to be very similarfrom one fixture to the next, with little or no humanly perceptiblevariation between fixtures of similar specifications and/or usingsimilarly rated solid state sources.

Additional advantages and novel features will be set forth in part inthe description which follows, and in part will become apparent to thoseskilled in the art upon examination of the following and theaccompanying drawings or may be learned by production or operation ofthe examples. The advantages of the present teachings may be realizedand attained by practice or use of various aspects of the methodologies,instrumentalities and combinations set forth in the detailed examplesdiscussed below.

BRIEF DESCRIPTION OF THE DRAWINGS

The drawing figures depict one or more implementations in accord withthe present teachings, by way of example only, not by way of limitation.In the figures, like reference numerals refer to the same or similarelements.

FIG. 1 illustrates an example of a white light emitting system, withcertain elements thereof shown in cross-section.

FIG. 1A is a color chart showing the black body curve and tolerancequadrangles along that curve for chromaticities corresponding to thedesired color temperature ranges.

FIG. 2 is a simplified cross-sectional view of a light-emitting diode(LED) type solid state source, in this case, for emitting near UVelectromagnetic energy, which may be used as the source in the system ofFIG. 1.

FIG. 3 is a graph of absorption and emission spectra of a number ofdoped semiconductor nanophosphors.

FIG. 4A is a graph of emission spectra of three of the dopedsemiconductor nanophosphors selected for use in an exemplary solid statelight emitting device as well as the spectrum of the white lightproduced by combining the spectral emissions from those three phosphors.

FIG. 4B is a graph of emission spectra of four doped semiconductornanophosphors, in this case, for red, green, blue and yellow emissions,as the spectrum of the white light produced by combining the spectralemissions from those four phosphors.

FIG. 5 illustrates an example of a white light emitting system, similarto that of FIG. 1, but using a different configuration/position for thecontainer for the doped semiconductor nanophosphor material.

FIG. 6A illustrates an example of a white light emitting system, whichutilizes a plurality of LED type sources and uses an optical integratingcavity and a deflector as parts of the optic, with certain elementsthereof shown in cross-section.

FIG. 6B is an interior view of the LEDs and aperture of the cavity inthe optic of the system of FIG. 6A.

FIG. 7 illustrates an example of another white light emitting systemwhere the semiconductor nanophosphors are located on a reflectivesurface of a reflective mask in the optic, with certain elements of thefixture shown in cross-section.

FIG. 8 is a top view of the fixture used in the system of FIG. 7.

FIG. 9 is a cross-sectional view of the solid state light fixture ofanother white system, where the fixture has a solid-filled opticalintegrating cavity.

FIG. 10 is a cross-sectional view of an alternative construction of thelight transmissive structure, for use in a fixture similar to that ofFIG. 9, in which the structure is formed of two transmissive solidmembers with a semiconductor nanophosphor filled gap formedtherebetween.

FIG. 11 is a cross-sectional view of an alternative construction of thelight transmissive structure, for use in a fixture similar to that ofFIG. 9, in which the structure is formed of a liquid-filled containerfor semiconductor nanophosphors, where the container and liquid formand/or fill the volume of the structure and thus the optical integratingcavity.

FIG. 12 is a cross-sectional view of yet another alternativeconstruction of the light transmissive structure, for use in a fixturesimilar to that of FIG. 9, in which the light transmissive structurecontains semiconductor nanophosphors at or near the aperture surface.

FIGS. 13A and 13B are detailed views of the cross-section in region B-Bof FIG. 12, wherein semiconductor nanophosphor containment at or nearthe aperture is implemented in two somewhat different ways.

FIG. 14 is a functional block type circuit diagram, of an implementationof the system control circuit and LED array which may also offer dimmingcontrol.

DETAILED DESCRIPTION

In the following detailed description, numerous specific details are setforth by way of examples in order to provide a thorough understanding ofthe relevant teachings. However, it should be apparent to those skilledin the art that the present teachings may be practiced without suchdetails. In other instances, well known methods, procedures, components,and/or circuitry have been described at a relatively high-level, withoutdetail, in order to avoid unnecessarily obscuring aspects of the presentteachings.

The various lighting systems, light fixtures and associated lightgeneration techniques disclosed herein relate to efficient generationand output of visible white light of characteristics that are highlydesirable in general lighting applications, for example, forillumination of spaces or areas to be inhabited by people or of objectsin or around such areas. For such general white light applications, atleast one semiconductor chip produces electromagnetic energy in a rangeof 380-420 nm, which is a portion of the “near ultraviolet” or “near UV”part of the electromagnetic energy spectrum. Several examples use a nearUV LED type semiconductor chip rated to produce electromagnetic energyat 405 nm. Semiconductor nanophosphors, typically doped semiconductornanophosphors, are remotely positioned in an optic of a light fixture,for example, at a remote location in or around a macro optical element(optic) such as a window, a light transmissive plate, a reflector,diffuser, an optical integrating cavity, etc. of the light fixture.Although in most of the specific examples, the optic includes at leastone reflector, the term “optic” is meant to broadly encompass a widevariety of macro optical elements that may be coupled, alone or incombination with other macro elements, to process electromagnetic energysupplied by the solid state source(s).

Each of the phosphors is of a type or configuration excitable by thenear UV energy in the 380-420 nm range to produce visible light of adifferent spectral characteristic, having little or no overlap withspectral absorption ranges of the nanophosphors. When excited together,the nanophosphors emit light for inclusion in the fixture output, andthe combined visible light output is at least substantially white andhas a color rendering index (CRI) of 75 or higher. Although sometimesreferred to below simply as white light for convenience, the lightproduced by near UV excitation of the semiconductor nanophosphor is “atleast substantially” white in that it appears as visible white light toa human observer, although it may not be truly white in theelectromagnetic sense in that it may exhibit some spikes or peaks and/orvalleys or gaps across the relevant portion of the visible spectrum.

The CIE color rendering index or “CRI” is a standardized measure of theability of a light source to reproduce the colors of various objects,based on illumination of standard color targets by a source under testfor comparison to illumination of such targets by a reference source.CRI, for example, is currently used as a metric to measure the colorquality of white light sources for general lighting applications.Presently, CRI is the only accepted metric for assessing the colorrendering performance of light sources. However, it has been recognizedthe CRI has drawbacks that limit usefulness in assessing the colorquality of light sources, particularly for LED based lighting products.NIST has recently been work on a Color Quality Scale (CQS) as animproved standardized metric for rating the ability of a light source toreproduce the colors of various objects. The color quality of the whitelight produced by the systems discussed herein are specified in terms ofCRI, as that is the currently available/accepted metric. Those skilledin the art will recognize, however, that the systems may be rated infuture by corresponding high measures of the quality of the white lightoutputs using appropriate values on the CQS once that scale is acceptedas an appropriate industry standard. Of course, other even more accuratemetrics for white light quality measurement may be developed in future.

In examples that utilize doped semiconductor nanophosphors, the lightoutput produced during the excitation of the semiconductor nanophosphorsexhibits a color temperature that will preferably be in one of thefollowing specific ranges along the black body curve: 2,725±145° Kelvin;3,045±175° Kelvin; 3,465±245° Kelvin; and 3,985±275° Kelvin. These colortemperature ranges correspond to nominal color temperature values of2,700° Kelvin, 3,000° Kelvin, 3,500° Kelvin and 4,000° Kelvin,respectively. Color temperature in each of these particular ranges, forexample, is highly useful, desirable and acceptable for many generallighting applications.

Before discussing structural examples, it may be helpful to discuss thetypes of phosphors of interest here. Semiconductor nanophosphors arenano-scale crystals or “nanocrystals” formed of semiconductor materials,which exhibit phosphorescent light emission in response to excitation byelectromagnetic energy of an appropriate input spectrum (excitation orabsorption spectrum). Examples of such nanophosphors include quantumdots (q-dots) formed of semiconductor materials. Like other phosphors,quantum dots and other semiconductor nanophosphors absorb light of onewavelength band and re-emit light at a different band of wavelengths.However, unlike conventional phosphors, optical properties of thesemiconductor nanophosphors can be more easily tailored, for example, asa function of the size of the nanocrystals. In this way, for example, itis possible to adjust the absorption spectrum and/or the emissionspectrum of the semiconductor nanophosphors by controlling crystalformation during the manufacturing process so as to change the size ofthe nanocrystals. For example, nanocrystals of the same material, butwith different sizes, can absorb and/or emit light of different colors.For at least some semiconductor nanophosphor materials, the larger thenanocrystals, the redder the spectrum of re-emitted light; whereassmaller nanocrystals produce a bluer spectrum of re-emitted light.

Doped semiconductor nanophosphors are somewhat similar in that they arenanocrystals formed of semiconductor materials. However, this later typeof semiconductor phosphors are doped, for example, with a transitionmetal or a rare earth metal. The doped semiconductor nanophosphors usedin the exemplary solid state light emitting devices discussed herein areconfigured to convert energy in the near UV range of 380-420 nm intowavelengths of light, which together result in high CRI visible whitelight emission.

Semiconductor nanophosphors, including doped semiconductor nanocrystalphosphors, may be grown by a number of techniques. For example,colloidal nanocrystals are solution-grown, although non-colloidaltechniques are possible.

In practice, a material containing or otherwise including dopedsemiconductor nanophosphors, of the type discussed in the examplesherein, would contain several different types of doped semiconductornanocrystals sized and/or doped so as to be excited by the near UV lightenergy. The different types of nanocrystals (e.g. semiconductormaterial, crystal size and/or doping properties) in the mixture areselected by their emission spectra, so that together the excitednanophosphors provides the high CRI white light of a rated colortemperature when all are excited by the near UV light energy. Relativeproportions in the mixture may also be chosen to help produce thedesired output spectra.

Doped semiconductor nanophosphors exhibit a relatively large Stokesshift, from lower wavelength of absorption spectra to higher wavelengthemissions spectra. In our examples, each of the phosphors is of a typeexcited in response to near UV electromagnetic energy in the range of380-420 nm. Each type of nanophosphor re-emits visible light of adifferent spectral characteristic, and each of the phosphor emissionspectra has little or no overlap with excitation or absorption ranges ofthe nanophosphors. Because of the magnitudes of the shifts, theemissions are substantially free of any overlap with the absorptionspectra of the phosphors, and re-absorption of light emitted by thephosphors can be reduced or eliminated, even in applications that use amixture of a number of such phosphors to stack the emission spectrathereof so as to provide a desired spectral characteristic in thecombined light output.

Reference now is made in detail to the examples illustrated in theaccompanying drawings and discussed below. FIG. 1 is a simplifiedillustration of a lighting system 10, for emitting visible,substantially white light, so as to be perceptible by a person. Afixture portion of the system is shown in cross-section (although somecross-hatching thereof has been omitted for ease of illustration). Thecircuit elements are shown in functional block form. The system 10utilizes a solid state source 11, for emitting electromagnetic energy ofa wavelength in the near UV range, in this case in the 380-420 nm range.Of course, there may be any number of solid state sources 11, as deemedappropriate to produce the desired level of output for the system 10 forany particular intended lighting application.

The solid state source 11 is a semiconductor based structure foremitting the near UV electromagnetic energy. The structure includes asemiconductor chip, such as a light emitting diode (LED), a laser diodeor the like, within a package or enclosure. A glass or plastic portionof the package that encloses the chip allows for emission of the near UVelectromagnetic energy in the desired direction. Many such sourcepackages include internal reflectors to direct energy in the desireddirection and reduce internal losses. To provide readers a fullunderstanding, it may help to consider a simplified example of thestructure of such a near UV solid state source 11.

FIG. 2 illustrates a simple example of a near UV LED type solid statesource 11, in cross section. In the example of FIG. 2, the source 11includes at least one semiconductor chip, each comprising two or moresemiconductor layers 13, 15 forming the actual LED. The semiconductorlayers 13, 15 of the chip are mounted on an internal reflective cup 17,formed as an extension of a first electrode, e.g. the cathode 19. Thecathode 19 and an anode 21 provide electrical connections to layers ofthe semiconductor chip device within the packaging for the source 11. Inthe example, an epoxy dome 23 (or similar transmissive part) of theenclosure allows for emission of the electromagnetic energy from thechip in the desired direction.

In this simple example, the near UV solid state source 11 also includesa housing 25 that completes the packaging/enclosure for the source.Typically, the housing 25 is metal, e.g. to provide good heatconductivity so as to facilitate dissipation of heat generated duringoperation of the LED. Internal “micro” reflectors, such as thereflective cup 17, direct energy in the desired direction and reduceinternal losses. Although one or more elements in the package, such asthe reflector 17 or dome 23 may be doped or coated with phosphormaterials, phosphor doping integrated in (on or within) the package isnot required for remote semiconductor nanophosphor implementations asdiscussed herein. The point here at this stage of our discussion is thatthe solid state source 11 is rated to emit near UV electromagneticenergy of a wavelength in the 380-420 nm range, such as 405 nm in theillustrated example.

Semiconductor devices such as the solid state source 11 exhibit emissionspectra having a relatively narrow peak at a predominant wavelength,although some such devices may have a number of peaks in their emissionspectra. Often, manufacturers rate such devices with respect to theintended wavelength of the predominant peak, although there is somevariation or tolerance around the rated value, from device to device.Solid state light source devices such as device 11 for use in a lightingsystem 10 will have a predominant wavelength in the 380-420 nm range.For example, the solid state source 11 in the examples of FIGS. 1 and 2is rated for a 405 nm output, which means that it has a predominant peakin its emission spectra at or about 405 nm (within the manufacturer'stolerance range of that rated wavelength value). The system 10, however,may use devices that have additional peaks in their emission spectra.

The structural configuration of the solid state source 11 shown in FIG.2 is presented here by way of example only. Those skilled in the artwill appreciate that the system 10 can utilize any solid state lightemitting device structure, where the device is configured as a source of380-420 nm near UV range electromagnetic energy, for example, havingsubstantial energy emissions in that range such as a predominant peak ator about 405 nm.

Returning to FIG. 1, the system 10 utilizes a macro scale optic 12together with the solid state source 11 to form a light fixture. Thelight fixture could be configured for a general lighting application.Examples of general lighting applications include downlighting, tasklighting, “wall wash” lighting, emergency egress lighting, as well asillumination of an object or person in a region or area intended to beoccupied by one or more people. A task lighting application, forexample, typically requires a minimum of approximately 20 foot-candles(fcd) on the surface or level at which the task is to be performed, e.g.on a desktop or countertop. In a room, where the light fixture ismounted in or hung from the ceiling or wall and oriented as a downlight,for example, the distance to the task surface or level can be 35 inchesor more below the output of the light fixture. At that level, the lightintensity will still be 20 fcd or higher for task lighting to beeffective. Of course, the fixture (11, 12) of FIG. 1 may be used inother applications, such as vehicle headlamps, flashlights, etc.

The macro scale optical processing element or ‘optic’ 12 in this firstexample includes a macro (outside the packaging of source 11) scalereflector 27. The reflector 27 has a reflective surface 29 arranged toreceive at least some electromagnetic energy from the solid state source11 and/or a remote semiconductor nanophosphor material 16. The disclosedsystem 10 may use a variety of different structures or arrangements forthe reflector 27. For efficiency, the reflective surface 29 of thereflector 27 should be highly reflective. The reflective surface 29 maybe specular, semi or quasi specular, or diffusely reflective.

In the example, the emitting region of the solid state source 11 fitsinto or extends through an aperture in a proximal section 31 of thereflector 27. The solid state source 11 may be coupled to the reflector27 in any manner that is convenient and/or facilitates a particularlighting application of the system 10. For example, the source 11 may bewithin the volume of the reflector 27, the source may be outside of thereflector (e.g. above the reflector in the illustrated orientation) andfacing to emit near UV light energy into the interior of the reflector,or the electromagnetic energy may be coupled from the solid source 11 tothe reflector 27 via a light guide or pipe or by an optical fiber.However, close efficient coupling is preferable.

The macro optic 12 will include or have associated therewith remotesemiconductor nanophosphors. Although associated with the optic, thephosphors are located apart from the semiconductor chip of the source orsources 11 used in the particular system 10. For that purpose, in thefirst system 10, the optic 12 also includes a container 14 holding amaterial 16 that contains semiconductor nanophosphors.

The semiconductor nanophosphors may be provided in the form of an ink,paint or other form of coating formed by a suitable binder andsemiconductor nanophosphor particles. Alternatively, the material 16 maytake the form of a liquid within which the semiconductor nanophosphorparticles are dispersed. The medium preferably exhibits hightransmissivity and/or low absorption to light of the relevantwavelengths, although it may be transparent or somewhat translucent.Although alcohol, oils (synthetic, vegetable or other oils) or othermedia may be used, in the example of FIG. 1, the medium may be a siliconmaterial. If silicone is used, it may be in gel form or cured into ahardened form in the finished light fixture product. The materialforming the walls of the container 14 also may exhibit hightransmissivity and/or low absorption to light of the relevantwavelengths. The walls of the container 14 may be smooth and highlytransparent or translucent, and/or one or more surfaces may have anetched or roughened texture.

As outlined above, the semiconductor nanophosphors in the material shownat 16 are of types or configurations (e.g. selected types of dopedsemiconductor nanophosphors) excitable by the near UV energy from thesolid state source 11. Together, the excited nanophosphors produceoutput light that is at least substantially white and has a colorrendering index (CRI) of 75 or higher. The fixture output light producedby this near UV excitation of the semiconductor nanophosphors exhibitscolor temperature in one of the desired ranges along the black bodycurve. In the examples, the phosphors are doped semiconductornanophosphors. Different light fixtures or systems designed fordifferent color temperatures of white output light would use differentformulations of mixtures of doped semiconductor nanophosphors. The whiteoutput light of the fixture exhibits color temperature in one of thefour specific ranges along the black body curve listed in Table 1 below.The solid state lighting system 11 could use a variety of differentcombinations of semiconductor nanophosphors to produce such an output.Examples of suitable materials, having the nanophosphor(s) in a siliconemedium, are available from NN Labs of Fayetteville, Ark.

TABLE 1 Nominal Color Temperatures and Corresponding Color TemperatureRanges Nominal Color Color Temp. Temp. (° Kelvin) Range (° Kelvin) 27002725 ± 145 3000 3045 ± 175 3500 3465 ± 245 4000 3985 ± 275

In Table 1, the nominal color temperature values represent the rated oradvertised temperature as would apply to particular lighting fixture orsystem products having an output color temperature within thecorresponding ranges.

The color temperature ranges fall along the black body curve. FIG. 1Ashows the outline of the CIE 1931 color chart, and the curve across aportion of the chart represents a section of the black body curve thatincludes the desired CIE color temperature (CCT) ranges. The light mayalso vary somewhat in terms of chromaticity from the coordinates on theblack body curve. The quadrangles shown in the drawing represent therange of chromaticity for each nominal CCT value. Each quadrangle isdefined by the range of CCT and the distance from the black body curve.

Table 2 below provides a chromaticity specification for each of the fourcolor temperature ranges. The x, y coordinates define the center pointson the black body curve and the vertices of the tolerance quadranglesdiagrammatically illustrated in the color chart of FIG. 1A.

TABLE 2 Chromaticity Specification for the Four Nominal Values/CCTRanges CCT Range 2725 ± 145 3045 ± 175 3465 ± 245 3985 ± 275 Nominal CCT2700° K 3000° K 3500° K 4000° K x y x y x y x y Center point 0.45780.4101 0.4338 0.4030 0.4073 0.3917 0.3818 0.3797 0.4813 0.4319 0.45620.4260 0.4299 0.4165 0.4006 0.4044 Tolerance 0.4562 0.426 0.4299 0.41650.3996 0.4015 0.3736 0.3874 Quadrangle 0.4373 0.3893 0.4147 0.38140.3889 0.369 0.367 0.3578 0.4593 0.3944 0.4373 0.3893 0.4147 0.38140.3898 0.3716

Doped semiconductor nanophosphors exhibit a large Stokes shift, that isto say from a short-wavelength range of absorbed energy up to a fairlywell separated longer-wavelength range of emitted light. FIG. 3 showsthe absorption and emission spectra of three examples of dopedsemiconductor nanophosphors. Each line of the graph also includes anapproximation of the emission spectra of the 405 nm LED chip, to helpillustrate the relationship of the 405 nm LED emissions to theabsorption spectra of the exemplary doped semiconductor nanophosphors.The illustrated spectra are not drawn precisely to scale but in a mannerto provide a teaching example to illuminate our discussion here.

The top line (a) of the graph shows the absorption and emission spectrafor an orange emitting doped semiconductor nanophosphor. The absorptionspectrum for this first phosphor includes the 380-420 nm near UV range,but that absorption spectrum drops substantially to 0 before reaching450 nm. As noted, the phosphor exhibits a large Stokes shift from theshort wavelength(s) of absorbed light to the longer wavelengths ofre-emitted light. The emission spectrum of this first phosphor has afairly broad peak in the wavelength region humans perceive as orange. Ofnote, the emission spectrum of this first phosphor is well above theillustrated absorption spectra of the other doped semiconductornanophosphors and well above its own absorption spectrum. As a result,orange emissions from the first doped semiconductor nanophosphor wouldnot re-excite that phosphor and would not excite the other dopedsemiconductor nanophosphors if mixed together. Stated another way, theorange phosphor emissions would be subject to little or no phosphorre-absorption, even in mixtures containing one or more of the otherdoped semiconductor nanophosphors.

The next line (b) of the graph in FIG. 3 shows the absorption andemission spectra for a green emitting doped semiconductor nanophosphor.The absorption spectrum for this second phosphor includes the 380-420 nmnear UV range, but that absorption spectrum drops substantially to 0 alittle below 450 nm. This phosphor also exhibits a large Stokes shiftfrom the short wavelength(s) of absorbed light to the longer wavelengthsof re-emitted light. The emission spectrum of this second phosphor has abroad peak in the wavelength region humans perceive as green. Again, theemission spectrum of the phosphor is well above the illustratedabsorption spectra of the other doped semiconductor nanophosphors andwell above its own absorption spectrum. As a result, green emissionsfrom the second doped semiconductor nanophosphor would not re-excitethat phosphor and would not excite the other doped semiconductornanophosphors if mixed together. Stated another way, the green phosphoremissions also should be subject to little or no phosphor re-absorption,even in mixtures containing one or more of the other doped semiconductornanophosphors.

The bottom line (c) of the graph shows the absorption and emissionspectra for a blue emitting doped semiconductor nanophosphor. Theabsorption spectrum for this third phosphor includes the 380-420 nm nearUV range, but that absorption spectrum drops substantially to 0 between400 and 450 nm. This phosphor also exhibits a large Stokes shift fromthe short wavelength(s) of absorbed light to the longer wavelengths ofre-emitted light. The emission spectrum of this third phosphor has abroad peak in the wavelength region humans perceive as blue. The mainpeak of the emission spectrum of the phosphor is well above theillustrated absorption spectra of the other doped semiconductornanophosphors and well above its own absorption spectrum. In the case ofthe blue example, there is just a small amount of emissions in theregion of the phosphor absorption spectra. As a result, blue emissionsfrom the third doped semiconductor nanophosphor would re-excite thatphosphor at most a minimal amount. As in the other phosphor examples ofFIG. 3, the blue phosphor emissions would be subject to relativelylittle phosphor re-absorption, even in mixtures containing one or moreof the other doped semiconductor nanophosphors.

Examples of suitable orange, green and blue emitting doped semiconductornanophosphors of the types generally described above relative to FIG. 3are available from NN Labs of Fayetteville, Ark.

As explained above, the large Stokes shift results in negligiblere-absorption of the visible light emitted by doped semiconductornanophosphors. This allows the stacking of multiple phosphors. Itbecomes practical to select and mix two, three or more such phosphors ina manner that produces a particular desired spectral characteristic inthe combined light output generated by the phosphor emissions.

FIG. 4A graphically depicts emission spectra of three of the dopedsemiconductor nanophosphors selected for use in an exemplary solid statelight fixture as well as the spectrum of the white light produced bysumming or combining the spectral emissions from those three phosphors.For convenience, the emission spectrum of the LED has been omitted fromFIG. 4A, on the assumption that a high percentage of the 405 nm lightfrom the LED is absorbed by the phosphors. Although the actual outputemissions from the fixture may include some near UV light from the LED,the contribution thereof if any to the sum in the output spectrum shouldbe relatively small.

Although other combinations are possible based on the phosphorsdiscussed above relative to FIG. 3 or based on other semiconductornanophosphor materials, the example of FIG. 4A represents emissions ofblue, green and orange phosphors. The emission spectra of the blue,green and orange emitting doped semiconductor nanophosphors are similarto those of the corresponding color emissions shown in FIG. 3. Light isadditive. Where the solid state fixture in system 10 includes the blue,green and orange emitting doped semiconductor nanophosphors as shown forexample at 27 in FIG. 1, the addition of the blue, green and orangeemissions produces a combined spectrum as approximated by the top or‘Sum’ curve in the graph of FIG. 4A.

It is possible to add one or more additional nanophosphors, e.g. afourth, fifth, etc., to the mixture to further improve the CRI. Forexample, to improve the CRI of the nanophosphor mix of FIGS. 3 and 4A, adoped semiconductor nanophosphor might be added to the mix with a broademissions spectrum that is yellowish-green or greenish-yellow, that isto say with a peak of the phosphor emissions somewhere in the range of540-570 nm, say at 555 nm.

Other mixtures also are possible, with two, three or more dopedsemiconductor nanophosphors. The example of FIG. 4B uses red, green andblue emitting semiconductor nanophosphors, as well as a yellow fourthdoped semiconductor nanophosphor. Although not shown, the absorptionspectra would be similar to those of the three nanophosphors discussedabove relative to FIG. 3. For example, each absorption spectrum wouldinclude at least a portion of the 380-420 nm near UV range. All fourphosphors would exhibit a large Stokes shift from the shortwavelength(s) of absorbed light to the longer wavelengths of re-emittedlight, and thus their emissions spectra have little or not overlap withthe absorption spectra.

In this example (FIG. 4B), the blue nanophosphor exhibits an emissionpeak at or around 484, nm, the green nanophosphor exhibits an emissionpeak at or around 516 nm, the yellow nanophosphor exhibits an emissionpeak at or around 580, and the red nanophosphor exhibits an emissionpeak at or around 610 nm. The addition of these blue, green, red andyellow phosphor emissions produces a combined spectrum as approximatedby the top or ‘Sum’ curve in the graph of FIG. 4B. The ‘Sum’ curve inthe graph represents a resultant white light output having a colortemperature of 2600° Kelvin (within the 2,725±145° Kelvin range), wherethat white output light also would have a CRI of 88 (higher than 75).

Various mixtures of doped semiconductor nanophosphors will produce whitelight emissions from solid state fixtures 10 that exhibit CRI of 75 orhigher. For an intended fixture specification, a particular mixture ofphosphors is chosen so that the light output of the fixture exhibitscolor temperature in one of the following specific ranges along theblack body curve: 2,725±145° Kelvin; 3,045±175° Kelvin; 3,465±245°Kelvin; and 3,985±275° Kelvin. In the example shown in FIG. 4A, the‘Sum’ curve in the graph produced by the mixture of blue, green andorange emitting doped semiconductor nanophosphors would result in awhite light output having a color temperature of 2800° Kelvin (withinthe 2,725±145° Kelvin range). That white output light also would have aCRI of 80 (higher than 75).

Returning to FIG. 1, assume that the phosphors at 27 in the fixture insystem 10 include the blue, green and orange emitting dopedsemiconductor nanophosphors discussed above relative to FIGS. 3 and 4.As discussed earlier, the semiconductor LED chip formed by layers 13 and15 is rated to emit near UV electromagnetic energy of a wavelength inthe 380-420 nm range, such as 405 nm in the illustrated example, whichis within the excitation spectrum of each of the three includedphosphors in the mixture shown at 16. When excited, that combination ofdoped semiconductor nanophosphors re-emits the various wavelengths ofvisible light represented by the blue, green and orange lines in thegraph of FIG. 4A. Combination or addition thereof in the fixture outputproduces “white” light, which for purposes of our discussion herein islight that is at least substantially white light. The white lightemission from the solid state fixture in system 10 exhibits a CRI of 75or higher (80 in the specific example of FIG. 4A). Also, the lightoutput of the fixture exhibits color temperature of 2800° Kelvin, thatis to say within the 2,725±145° Kelvin range. Other combinations ofdoped semiconductor nanophosphors can be used in a solid state lightingsystem 10 to produce the high CRI white light in the 3,045±175° Kelvin,3,465±245° Kelvin, and 3,985±275° Kelvin ranges.

This system 10 provides a “remote” implementation of the semiconductornanophosphors in that the semiconductor nanophosphors are outside of thepackage enclosing the actual semiconductor chip or chips and thus areapart or remote from the semiconductor chip(s). The remote semiconductornanophosphors may be provided in or about the optic 12 in any of anumber of different ways, such as in the form of an ink, paint or othercoating on any appropriate portion of the inner reflective surface 29 ofthe macro reflector 27. Several different forms and locations of thesemiconductor nanophosphors are shown and described with regard to laterexamples. In the first example of FIG. 1, the container 14 extendsacross a portion of the volume within the reflector 27 across the pathof energy emissions from the source 11 through the optic 12.

At least some semiconductor nanophosphors degrade in the presence ofoxygen, reducing the useful life of the semiconductor nanophosphors.Hence, it may be desirable to encapsulate the semiconductor nanophosphormaterial 16 in a manner that blocks out oxygen, to prolong useful lifeof the semiconductor nanophosphors. In the example of FIG. 1, thecontainer 14 therefore may be a sealed glass container, the material ofwhich is highly transmissive and exhibits a low absorption with respectto visible light and the relevant wavelength(s) of near UV energy. Theinterior of the container 14 is filled with the semiconductornanophosphor material 16 in a manner that leaves little or no gas withinthe interior of the container. Any of a number of various sealingarrangements may be used to seal the interior once filled, so as tomaintain a good oxygen barrier and thereby shield the semiconductornanophosphors from oxygen.

The container 14 and the semiconductor nanophosphor material 16 may belocated at any convenient distance in relation to the proximal end 31 ofthe reflector 27 and the solid state source 11. For example, thecontainer 14 and the semiconductor nanophosphor material 16 could belocated adjacent to the proximal end 31 of the reflector 27 (adjacent tothat part of the reflective surface 29) and adjacent to the solid statesource 11. Alternatively, as shown by the system 10′ of FIG. 5, thecontainer 14′ and the semiconductor nanophosphor material 16′ in theoptic 12′ could be located at or near the distal end of the reflector27. The container may also have a wide variety of shapes. In the exampleof FIG. 1, the container 14 is relative flat and disk-shaped. In theexample of FIG. 5, the container 14′ has a convex outer curvature,although it could be convex or concave. The inner surface of thecontainer 14′ facing toward the solid state source 11 and the reflectivesurface 29 may be flat, concave or convex (as shown). Those skilled inthe art will also recognize that the optic 12 or 12′ could include avariety of other optical processing elements, such as a furtherreflector, one or more lenses, a diffuser, a collimator, etc.

The lighting system 10 (or 10′) also includes a control circuit 33coupled to the LED type semiconductor chip in the source 11, forestablishing output intensity of electromagnetic energy output of theLED source 11. The control circuit 33 typically includes a power supplycircuit coupled to a voltage/current source, shown as an AC power source35. Of course, batteries or other types of power sources may be used,and the control circuit 33 will provide the conversion of the sourcepower to the voltage/current appropriate to the particular one or moreLEDs 11 utilized in the system 10. The control circuit 33 includes oneor more LED driver circuits for controlling the power applied to one ormore sources 11 and thus the intensity of energy output of the sourceand thus of the fixture. The control circuit 21 may be responsive to anumber of different control input signals, for example to one or moreuser inputs as shown by the arrow in FIG. 1, to turn power ON/OFF and/orto set a desired intensity level for the white light output provided bythe system 10.

In the exemplary arrangement of the optic 12 (or 12′), when near UVlight energy from the 405 nm sold state source 11 enters the interiorvolume of the reflector 27 and passes through the outer glass of thecontainer 14 into the material 16 bearing the semiconductornanophosphors. Much of the near UV emissions enter the containerdirectly, although some reflect off of the surface 29 and into thecontainer. Within the container 14 or 14′, the 405 nm near UV energyexcites the semiconductor nanophosphors in material 16 to produce lightthat is at least substantially white, that exhibits a CRI of 75 orhigher and that exhibits color temperature in one of the specifiedranges. Light resulting from the semiconductor nanophosphor excitation,essentially absorbed as near UV energy and reemitted as visible light ofthe wavelengths forming the desired white light, passes out through thematerial 16 and the container 14 or 14′ in all directions. Some lightemerges directly out of the optic 12 as represented by the undulatingarrows. However, some of the white light will also reflect off ofvarious parts of the surface 29. Some light may even pass through thecontainer and semiconductor nanophosphor material again before emissionfrom the optic.

In the orientation illustrated in FIGS. 1 and 5, white light from thesemiconductor nanophosphor excitation, including any white lightemissions reflected by the surface 29 are directed upwards, for example,for lighting a ceiling so as to indirectly illuminate a room or otherhabitable space below the fixture. The orientation shown, however, ispurely illustrative. The optic 12 or 12′ may be oriented in any otherdirection appropriate for the desired lighting application, includingdownward, any sideways direction, various intermediate angles, etc.Also, the examples of FIGS. 1 and 5 utilize relatively flat reflectivesurfaces for ease of illustration. Those skilled in the art willrecognize, however, that the principles of that example are applicableto optics of other shapes and configurations, including optics that usevarious curved reflective surfaces (e.g. hemispherical,semi-cylindrical, parabolic, etc.).

FIG. 6A illustrates another lighting system 50 that may utilize near UVsolid state sources and a remote semiconductor nanophosphor material,typically containing doped semiconductor nanophosphors, for emittingvisible light for white light type general lighting applications. Theillustrated system 50 includes a diffusely reflective volume forming anoptical cavity 51. The cavity forms a first primary optic of the system50, and the system 50 may include a secondary optic processing theoutput light from the cavity as discussed more later. As in the earlierexample, the doped semiconductor nanophosphors are remotely implemented,that is to say in the macro optic (as opposed to being within the solidstate source(s)).

One or more reflectors having a diffusely reflective interior surfaceform the cavity 51, to receive and combine light of variouscolors/wavelengths within the desired spectral range. The cavity 51 mayhave various shapes. The illustrated cross-section would besubstantially the same if the cavity is hemispherical or if the cavityis semi-cylindrical with the cross-section taken perpendicular to thelongitudinal axis. As discussed in detail with regard to the example ofFIGS. 6A and 6B, but applicable to several later examples as well,hemispherical shapes for the volume of the integrating cavity and thusthe reflective surface(s) thereof are shown and discussed, most oftenfor convenience. Examples having shapes corresponding to a portion orsegment of a sphere or cylinder are preferred for ease of illustrationand/or because curved surfaces provide better efficiencies than othershapes that include more edges and corners which tend to trap light.Those skilled in the art will understand, however, that the volume ofthe cavity of the fixture, may have any shape providing adequatereflections within the volume/cavity for a particular lightingapplication.

At least a substantial portion of the interior surface(s) of the cavity51 exhibit(s) diffuse reflectivity. It is desirable that the cavitysurface or surfaces have a highly efficient reflective characteristic,e.g. a reflectivity equal to or greater than 90%, with respect to therelevant wavelengths. In the example of FIGS. 6A and 6B, the surface ishighly diffusely reflective, approximately 97-99% reflective, withrespect to energy in at least the visible and near-ultraviolet portionsof the electromagnetic spectrum.

For purposes of this discussion, the cavity 51 in the apparatus 50 isassumed to be hemispherical. In the example, a hemispherical dome 53 anda substantially flat cover plate 55 form the optical cavity 51. Althoughshown as separate elements, the dome and plate may be formed as anintegral unit. At least the interior facing surface 54 of the dome 53and the interior facing surface 56 of the cover plate 55 are highlydiffusely reflective, so that the resulting cavity 51 is highlydiffusely reflective with respect to the electromagnetic energy spectrumproduced by the system 50, particularly that in the spectral range forthe intended white light output. As a result the cavity 51 is anintegrating type optical cavity. One or both of the inner surfaces 54,56 may have an associated coating or container of semiconductornanophosphor material, so that the impact of some of the energy on thesurfaces causes emission of visible light of the desired whitecharacteristics. As discussed more later, the example implements thesemiconductor nanophosphor material, containing doped semiconductornanophosphors, at 58 on the inner surface 56 of the plate 55.

Elements of the reflector forming the cavity 51 (e.g. consisting of dome53 and plate 55 in the example) may be formed of a diffusely reflectiveplastic material, having a 97% or higher reflectivity and a diffusereflective characteristic. Examples of such materials include Valar™ andWhiteOptics™. Another example of a material with a suitable reflectivityat or approaching 99% is Spectralon™. Alternatively, one or more of theelements forming the optical integrating cavity 51 may comprise a rigidsubstrate having an interior surface, and a diffusely reflective coatinglayer formed on the interior surface of the substrate so as to providethe diffusely reflective interior surface 54 or 56 of the opticalintegrating cavity 51. The coating, for example, might be Duraflect™.Alternatively, the coating layer might take the form of a flat-whitepaint or white powder coat.

The optical integrating cavity 51 has an optical aperture or lightpassage 57 for allowing emission of light. The optical aperture 51 inthis example approximates a circle, although other shapes are possible.In the example, the aperture 57 is a physical passage or opening throughthe approximate center of the cover plate 55. Those skilled in the artwill recognize, however, that the intent is to allow efficient passageof light out of the cavity 51, and therefore the optical aperture may bethrough some other device or material that is transmissive to therelevant wavelengths. For example, the aperture may be formed of adiffuser and/or a filter. If implemented as a filter, the filter at theaperture might allow passage of visible light but block UV emissionsfrom the cavity. Also, the optical aperture 51 may be at any otherconvenient location on the plate 55 or the dome 53; and there may be aplurality of openings or other light passages, for example, oriented toallow emission of integrated visible white light in two or moredifferent directions or regions.

Because of the diffuse reflectivity within the cavity 51, light withinthe cavity is integrated before passage out of the aperture 57. In theexample, the fixture portion of the system 50 is shown emitting thelight downward through the aperture 57, for convenience. However, thefixture may be oriented in any desired direction to perform a desiredapplication function, for example to provide visible luminance topersons in a particular direction or location with respect to thefixture or to illuminate a different surface such as a wall, floor ortable top.

The system 50 also includes a plurality of sources of near UV radiantenergy, similar to the solid state sources 11 in the earlier examples.Although any solid state source producing energy in the range of 380-420nm may be used, for purposes of further discussion of this example, wewill assume that the sources are near UV LEDs 59 rated to produce nearUV light energy at or about 405 nm. Three of the 405 nm LEDs 59 arevisible in the illustrated cross-section of FIG. 6A. The LEDs aregenerally similar to the LED type source 11 of FIG. 2. Any number ofsuch LEDs 59 may be used. The LEDs 59 supply 405 nm light into theinterior of the optical integrating cavity 51. As shown, the points ofemission into the interior of the optical integrating cavity are notdirectly visible from outside the fixture through the aperture 57.

In this example, 405 nm near UV light outputs of the LED sources 59 arecoupled directly to openings at points on the interior of the cavity 51,to emit near UV light directly into the interior of the opticalintegrating cavity 51. The LEDs 59 may be located to emit light atpoints on the interior wall of the reflective element 53, e.g. at ornear the junction with the plate 55, although preferably such pointswould still be in regions out of the direct line of sight through theaperture 57. For ease of construction/illustration, however, theexemplary openings for the LEDs 59 are formed through the cover plate55. On the plate 55, the openings/LEDs may be at any convenientlocations. Of course, the LEDs or other solid state sources may becoupled to the points for entry of energy into the cavity 51 in anyother manner that is convenient and/or facilitates a particular systemapplication. For example, one or more of the sources 59 may be withinthe volume of the cavity 51. As another example, the sources 59 may becoupled to the openings into the cavity 51 via a light guide or pipe orby an optical fiber.

In the light fixture in the system 50 of FIG. 6A, the cavity 51incorporates a semiconductor nanophosphor material shown at 58, whichcontains for example orange, green and blue emitting doped semiconductornanophosphors like those discussed above relative to FIGS. 3 and 4. Thesemiconductor nanophosphors could be implemented in a container and/orusing any of the bearer materials discussed above relative to theexample of FIG. 1. In the example of FIG. 6A, the semiconductornanophosphor is provided as an ink, paint or other form of coating 58formed by a suitable binder and doped semiconductor nanophosphorparticles. The semiconductor nanophosphor coating 58 could be on anyreflective surface of the cavity 51. However, as illustrated, thesemiconductor nanophosphor coating 58 is formed on the reflective innersurface 56 of the plate 55. The coating is shown covering substantiallyall of the reflective inner surface 56, although the coating could bedeployed on a more limited portion of the surface 56. Of note, thecoating 58 is located on the surface(s) where it is not directly visiblefrom outside the fixture through the aperture 57, for example, so thatthe color of the coating when the lighting system 50 is off is notvisible to an observer. Much of the surface 54 of the reflector 53 wouldbe visible through the fixture aperture 57 and would appear white to theobserver, in this example.

The example shows the semiconductor nanophosphor material 58 on regionsof surface 56 between the near UV LEDs 59. Those skilled in the art willappreciate, however, that the material 58 may extend over the lightemitting surfaces of the LEDs 59 or over the apertures through which thenear UV energy from the LEDs enters the cavity 51, so that the near UVenergy initially passes through the material 58 as it enters the cavity51.

Again, each of the doped semiconductor nanophosphors used in coating 58is of a type or configuration excitable by the 405 nm near UV energyfrom the LED sources 59. Each such phosphor used in the system 50 emitslight in a different spectrum, such as respective ones of the orange,green and blue spectra discussed above with regard to FIGS. 3 and 4.Such spectra do not overlap with the absorption spectra of thephosphors. When all of the various types of doped semiconductornanophosphors used in the coating 58 are excited by the 405 nm near UVenergy, the phosphors together produce light that is at leastsubstantially white and has a color rendering index (CRI) of 75 orhigher. The light output of the system 50 produced by this near UVexcitation of the phosphor in the coating 58 may exhibit colortemperature of 2,725±145° Kelvin (as in FIG. 4A). Alternatively thewhite light output may exhibit color temperature of 3,045±175° Kelvin,the white output light may exhibit color temperature of 3,465±245°Kelvin, or that light may exhibit color temperature of 3,985±275°Kelvin.

In the example of FIG. 6A, the solid state sources emit their 405 nmnear UV energy toward the reflective inner surface 54 of the dome shapedreflector 53. These emissions are diffusely reflected by the surface 54back toward the plate 55. Much of the reflected 405 inn energy in turnimpacts on the semiconductor nanophosphors in the coating 58. Thecoating tends to be somewhat transmissive and some 405 nm energyimpacting the coating may pass through and diffusely reflect from thesurface 56 of the plate shaped reflector 55 and back through thecoating. At some point on one or more passes through the coating 58,photons of the 405 nm energy impact and excite particles of thesemiconductor nanophosphors contained in the coating. When so excited,the phosphor particles re-emit electromagnetic energy but now of thewavelengths for the desired visible spectrum for the intended whitelight output. The visible light produced by the excitation of thesemiconductor nanophosphor particles diffusely reflects one or moretimes off of the reflective inner surfaces 54, 56 forming the cavity 51.This diffuse reflection within the cavity integrates the light producedby the semiconductor nanophosphor excitation to form integrated light ofthe desired characteristics at the optical aperture 57 providing asubstantially uniform output distribution of integrated light (e.g.substantially Lambertian).

The effective optical aperture at 57 forms a virtual source of whitelight from the first optic (and possible from the fixture portion) ofthe system 50. The integration tends to form a relatively Lambertiandistribution across the virtual source. When the fixture illumination isviewed from the area illuminated by the combined light, the virtualsource at 57 appears to have substantially infinite depth of theintegrated light. Also, the visible intensity is spread uniformly acrossthe virtual source, as opposed to forming one or more individual smallpoint sources of higher intensity as would be seen if the one or moresolid state sources were directly observable without sufficient diffuseprocessing before emission through the optical aperture.

Pixelation and color striation are problems with many prior solid statelighting devices. When a non-cavity type LED fixture output is observed,the light output from individual LEDs or the like appear asidentifiable/individual point sources or ‘pixels.’ Even with diffusersor other forms of common mixing, the pixels of the sources are apparent.The observable output of such a prior system exhibits a highmaximum-to-minimum intensity ratio. In systems using multiple lightcolor sources, e.g. RGB LEDs, unless observed from a substantialdistance from the fixture, the light from the fixture often exhibitsstriations or separation bands of different colors. Although this is notas pronounced with systems using only one color of LED, there may stillbe separation band issues. In systems using an integrating cavity, suchas the cavity 51 in the example of FIG. 6A, however, the opticalintegrating volume or cavity 51 converts the point source output(s) andlight resulting from excitation of the semiconductor nanophosphor to avirtual source output of light, at the effective optical aperture formedat region 57, which is free of pixilation or striations. The virtualsource output is unpixelated and relatively uniform across the apparentoutput area of the fixture, e.g. across the optical aperture 57. Theoptical integration sufficiently mixes the light so that the lightoutput exhibits a relatively low maximum-to-minimum intensity ratioacross that optical aperture 57. In virtual source examples discussedherein, the virtual source light output exhibits a maximum-to-minimumratio of 2 to 1 or less over substantially the entire optical outputarea. The area of the virtual source is at least one order of magnitudelarger than the area of the point source output(s) of the solid statelight emitter(s) 59.

Semiconductor nanophosphors, such as the doped semiconductornanophosphors used in the examples, produce relatively uniformrepeatable performance somewhat independent of the rated wavelength ofthe source, so long as within the excitation spectrum. Thus, havingchosen appropriate phosphors to produce light of the desired CRI andcolor temperature, fixtures using that phosphor formulation willconsistently produce white light having the CRI in the same range andcolor temperature in the same range with little or not humanlyperceptible variation from one fixture to another. In this way, the useof the semiconductor nanophosphors to produce the actual white lightmasks any variation in the wavelengths of electromagnetic energyproduced by different solid state sources (even though the solid statesources may be rated to produce the same color of light).

The system 50 also includes a control circuit 61 coupled to the 405 nmLEDs 59 for establishing output intensity of electromagnetic energygenerated by each of the LED type solid state sources. The controlcircuit 61 typically includes a power supply circuit coupled to asource, shown as an AC power source 63, although those skilled in theart will recognize that batteries or other power sources may be used. Inits simplest form, the circuit 61 includes a common driver circuit toconvert power from source 63 to the voltages/current appropriate todrive the LEDs 59 at an output intensity specified by a control input tothe circuit 61. The control input may indicate a desired ON/OFF stateand/or provide a variable intensity control setting. The control circuit61 may be responsive to a number of different control input signals, forexample, to one or more user inputs as shown by the arrow in FIG. 6A.Although not shown in this simple example, feedback may also beprovided.

The optical aperture 57 may serve as the light output of the fixture,directing optically integrated white light of the desiredcharacteristics and relatively uniform intensity distribution to adesired area or region to be illuminated in accord with a particulargeneral lighting application of the fixture. Although not shown in thisexample, the opening through plate 55 that forms the optical aperture 57may comprise a somewhat transmissive or transparent region of the plate55 or may comprise a physical opening having a grate, lens, filter ordiffuser (e.g. a holographic element) to help distribute the outputlight and/or to close the opening against entry of moisture or debris.If a filter is provided, for example, the filter at the aperture 57might allow passage of visible light but block UV emissions from thecavity 51.

For some applications, the system 50 includes an additional deflector orother optical processing element as a secondary optic, e.g. todistribute and/or limit the light output to a desired field ofillumination. In the example of FIG. 6A, the fixture part of the system50 also utilizes a conical deflector 65 having a reflective innersurface 69, to efficiently direct most of the light emerging from thevirtual light source at optical aperture 57 into a somewhat narrow fieldof illumination. The deflector is essentially a secondary optic in thatit further processes light output from the first or primary optic, i.e.from cavity 51. A small opening at a proximal end of the deflector iscoupled to the optical aperture 57 of the optical integrating cavity 51.The deflector 65 has a larger opening 67 at a distal end thereof. Theangle and distal opening size of the conical deflector 65 define anangular field of electromagnetic energy emission from the apparatus 50.Although not shown, the large opening of the deflector may be coveredwith a transparent plate, a diffuser or a lens, or covered with agrating, to prevent entry of dirt or debris through the cone into thesystem and/or to further process the output white light. Alternatively,the deflector could be filled with a solid light transmissive materialof desirable properties.

The conical deflector 65 may have a variety of different shapes,depending on the particular lighting application. In the example, wherethe cavity 51 is hemispherical and the optical aperture 57 is circular,the cross-section of the conical deflector is typically circular.However, the deflector may be somewhat oval in shape. Even if theaperture 57 and the proximal opening are circular, the deflector may becontoured to have a rectangular or square distal opening. Inapplications using a semi-cylindrical cavity, the deflector may beelongated or even rectangular in cross-section. The shape of the opticalaperture 57 also may vary, but will typically match the shape of thesmall end opening of the deflector 65. Hence, in the example the opticalaperture 57 would be circular. However, for a device with asemi-cylindrical cavity and a deflector with a rectangularcross-section, the optical aperture may be rectangular.

The deflector 65 comprises a reflective interior surface 69 between thedistal end and the proximal end. In some examples, at least asubstantial portion of the reflective interior surface 69 of the conicaldeflector exhibits specular reflectivity with respect to the integratedelectromagnetic energy. For some applications, it may be desirable toconstruct the deflector 65 so that at least some portions of the innersurface 69 exhibit diffuse reflectivity or exhibit a different degree ofspecular reflectivity (e.g. quasi-specular), so as to tailor theperformance of the deflector 65 to the particular application. For otherapplications, it may also be desirable for the entire interior surface69 of the deflector 65 to have a diffuse reflective characteristic. Insuch cases, the deflector 65 may be constructed using materials similarto those taught above for construction of the reflector (53, 55) of theoptical integrating cavity 51.

In the exemplary system 50 of FIG. 6A, the semiconductor nanophosphormaterial is deployed within the cavity 51 that serves as the primaryoptic. It is also envisioned that material containing dopedsemiconductor nanophosphors may be deployed in the secondary opticformed by deflector 65, either instead of or in addition to the dopedsemiconductor nanophosphors deployed in the cavity 51. For example, acontainer of the phosphor bearing material similar to those shown at14′, 16′ in FIG. 5 could be deployed at the larger opening 67 at adistal end of the deflector 65.

In the illustrated example, the large distal opening 67 of the deflector65 is roughly the same diameter as the structure forming the cavity 51.In some applications, this size relationship may be convenient forconstruction purposes. However, a direct relationship in size of thedistal end of the deflector and the cavity is not required. The largeend of the deflector may be larger or smaller than the cavity structure.As a practical matter, the size of the cavity 51 is optimized to providethe integration or combination of light within the cavity 51. The size,angle and shape of the deflector 65 in turn determine the area or regionthat will be illuminated by the combined or integrated light emittedfrom the cavity 51 via the optical aperture 57.

FIGS. 7 and 8 are cross-section and top views of an example of a system70 that utilizes a reflective mask 71 within the volume of a principalreflector 73, where the doped semiconductor nanophosphors are deployedremotely from the near UV solid state sources 75 on the surface 81 ofthe reflective mask 71 facing toward the solid state sources 75. As withthe earlier examples, the directional orientation is given only by wayof an example that is convenient for illustration and discussionpurposes.

The system 70 may include one or more solid state sources 75 of 405 nmnear UV energy, as in the example of FIG. 2 above. The system 70utilizes the reflector 73, located outside the energy sources 75. Thereflector 73 has a reflective inner surface 79, which may be diffuselyreflective, specular or quasi-specular, as in the example of FIG. 1. Inthe example of FIG. 7, the emitting region of each near UV solid statesource 75 fits into or extends through an aperture in a back section 77of the reflector 73. The sources 75 may be coupled to the reflector 73in any manner that is convenient and/or facilitates a particularlighting application of the system 70, as discussed above relative tothe example of FIG. 1.

The lighting system 70 uses a second reflector forming a mask 71,positioned between the solid state sources 75 and a region to beilluminated by the visible white light output from the system. Thereflector 71 masks direct view of the near UV solid state sources 75 byany person in that region. Although the mask reflector 71 could be nearthe distal end of the reflector 73 or even outside the reflector 73adjacent to the distal end, in the illustrated example, the mask 71 iswithin the space or volume formed by the first reflector 73 and somewhatnearer the back section 77 of the reflector 73. The base material usedto form the mask reflector 71 may be any convenient one of the materialsdiscussed above for forming reflectors. The surface 81 facing toward thenear UV solid state sources 75 is reflective. Although it may have otherreflective characteristics, in the example, the surface 81 is diffuselyreflective. At least a substantial portion of the area of the surface 81facing toward the solid state sources 75 is covered by a semiconductornanophosphor material 83. As in the example of FIG. 6A, thesemiconductor nanophosphor material may be in a suitable container buthere is shown as a surface coating analogous to the coating the exampleof FIG. 6A.

Again, the doped semiconductor nanophosphors in the material shown at 83are of types or configurations excitable by the 405 nm near UV energyfrom the solid state sources 75. Each type of doped semiconductornanophosphors produces a different visible spectrum, which does notoverlap with any of the absorption spectra. The light emissions togetherprovide a device output light that is at least substantially white andhas a color rendering index (CRI) of 75 or higher. The output lightproduced during this near UV excitation of the semiconductornanophosphors in the coating 83 may exhibit color temperature of2,725±145° Kelvin as in FIG. 3. Alternatively, the output light mayexhibit color temperature of 3,045±175° Kelvin, the output lightproduced may exhibit color temperature of 3,465±245° Kelvin, or theoutput light may exhibit color temperature of 3,985±275° Kelvin.

The system 70 includes a control circuit 61 and power source 63, similarto those in several of the earlier examples. These elements control theoperation and output intensity of each LED 75. The intensities determinethe amount of 405 nm light energy introduced into the space between thereflectors 71 and 77. The intensities of that near UV light that pumpsthe semiconductor nanophosphors in the coating 83 also determine theamount visible light generated by the excitation of the semiconductornanophosphors. Visible light generated by the phosphor excitationreflects one of more times from the surfaces of the reflectors 71 and 77and is emitted from the distal end of the reflector

The 405 nm sources actually produce visible light, which may appearpurple to an observer. The mask 71 serves to control glare from thesources 75 and/or to provide visual comfort to a person observing thefixture. From many angles, such an observer will not directly view thebright light sources 75, although in this example, some near UV lightmay escape the system without phosphor conversion. To maintain fixtureefficiency, the mask 71 may be sized and positioned so as to impactefficiency as little as possible and not significantly affect theillumination field of view (FOV) or light distribution. As in theexample of FIG. 6A, the coating 83 is located on a surface 81 where itis not directly visible from outside the fixture through the reflector73, for example, so that the color of the coating when the light is offis not visible to an observer. The opposite surface of the maskreflector 71 would be visible through the distal aperture of thereflector 73 and would appear white (or specular, etc.) to the observer.The semiconductor nanophosphor excitation, however, does produce whitelight of the desired CRI and color temperature characteristics, as inthe earlier embodiments.

The example of FIGS. 7 and 8 is a circular example and utilizesrelatively flat reflective surfaces. Those skilled in the art willrecognize that the principles of that example are applicable to systemsof other shapes and configurations (e.g. rectangular) and to systemsusing various curved reflective surfaces (e.g. hemispherical,semi-cylindrical, parabolic, etc.).

FIG. 9 is a cross-section view of a light engine portion of a fixturethat is particularly efficient at extracting light from solid statelight sources, optically integrating white light from phosphor emissionsand delivering a uniform white light output, which is intended forgeneral lighting, for example, in a region or area intended to beoccupied by a person. For convenience, the lighting apparatus is shownin an orientation for emitting light downward. However, the apparatus171 may be oriented in any desired direction to perform a desiredgeneral lighting application function. As in the earlier examples, thelight engine 171 uses near ultraviolet (UV) electromagnetic energy froma number of sources to pump semiconductor nanophosphors, to produce highCRI white light. Like the example of FIGS. 6A and 6B, the light engine171 incorporates an optical integrating cavity to efficiently combinethe emissions and produce a highly uniform white light output, however,in this example, the cavity is filled with a light transmissivestructure.

The apparatus 171 could be used alone to form a light fixture or morelikely would be used with other housing elements and possibly with asecondary optic (not shown) to form the overall commercial light fixtureproduct. Together with the other electrical components, the apparatus or“light engine” 171 of FIG. 9 (or the fixture including the associatedhousing and deflector elements) would form a lighting system.

The optic in the exemplary fixture or engine 171 includes a plurality ofLED type near UV solid state light emitters 151 as well as a reflector173 and a light transmissive structure 176 forming an opticalintegrating cavity or volume 172. The emitters 151 emit near UVelectromagnetic energy in a range of 380-420 nm. The emitters 151 may be405 nm emitters similar to the emitters 11 and 59 in the earlierexamples. The emitters 151 are sufficient in number and strength ofoutput for the light engine 171 to produce light intensity sufficientfor the general lighting application of the fixture.

As shown, the light transmissive structure 176 has a contoured outersurface 176 c and an optical aperture surface 180. The contoured outersurface 176 c could extend essentially as a hemisphere to an edge atwhich it would be substantially perpendicular to the optical aperturesurface 180 (compare say to FIG. 10). However, in this example, thesurface 176 c corresponds to a segment of a sphere somewhat less than ahemisphere and does not extend continuously to the periphery of theaperture surface 180. Instead, the region between the curve of the uppercontoured surface 176 c and the optical aperture surface 180 is beveledor angled. In this example, the light transmissive structure 176therefore has a peripheral optical coupling surface 176 p between thecontoured outer surface 176 c and the optical aperture surface 180. Inthis example, the peripheral optical coupling surface 176 p forms anobtuse angle with respect to the optical aperture surface 180 (and anacute angle with respect to the vertical in the downlight orientation ofFIG. 9). At least the outer peripheral portion 176 p of the structure176 along the lower portion of contoured surface 176 c is substantiallyrigid.

In this example, the contoured surface 176 c has a roughened or etchedtexture, and some or all of the aperture surface 180 may have aroughened or etched texture. In such an implementation, at least anyportion of the angled peripheral optical coupling surface 176 p of thelight transmissive structure 176 that receives light from one or more ofthe solid state light emitters 151 likely would be highly transparent.Of course, the aperture surface 180 may be highly transparent as well.In the example, the aperture surface 180 is shown as a flat surface.However, those skilled in the art will recognize that this surface 180may have a convex or concave contour.

In the example of FIG. 9, the outer surfaces of the structure 176approach or approximate a hemisphere that is somewhat truncated at theperipheral region by the angled surface 176 p. The optical aperturesurface identified by number 180 approximates a circle. Examples havingshapes corresponding to a portion or segment of a sphere or cylinder arepreferred for ease of illustration and/or because curved surfacesprovide better efficiencies than other shapes that include more edgesand corners which tend to trap light. Those skilled in the art willunderstand, however, that the volume of the light transmissivestructure, and thus the optical cavity 172 of the fixture or lightengine 171, may have any shape providing adequate reflections within thevolume/cavity for a particular application. For example, the contour ofthe upper surface 176 c may be hemispherical, may correspond in crosssection to a segment of a circle less than a half circle (less thanhemispherical), or may extend somewhat further than a hemisphere tocorrespond in cross section to a segment of a circle larger than a halfcircle. Also, the contoured portion 176 c may be somewhat flattened orsomewhat elongated relative to the illustrated axis of the opticalaperture 174, the aperture surface 180 and the exemplary solid 176 (inthe vertical direction in the exemplary downlight orientation depictedin FIG. 9). The coupling surface 176 p is shown having a substantiallyflat cross-section, although of course it would curve around thecircular structure 176. However, other shapes or contours for thesurface 176 p may be used, for example, with a convex cross section orconcave cross-section or with indentations to receive emitting surfacesor elements of particular types of LEDs 151.

Here, the light transmissive structure 176 forming the volume 172comprises a one piece light transmissive solid 176 substantially fillingthe volume 172, although other implementations are discussed later. Likethe fixtures in the earlier examples, the fixture or light engine 171includes phosphors, such as doped semiconductor nanophosphors, forconverting the near UV energy from the near UV solid state lightemitters 151 into visible white light, with a color rendering index(CRI) of 75 or higher. By using one of the mixtures of dopedsemiconductor nanophosphors, like those in the earlier examples, thewhite output light may exhibit a color temperature in one of the severalspecific ranges along the black body curve.

The phosphors may be embodied in the light engine 171 in any of avariety of ways deemed advantageous or convenient, and severalalternatives are described later with respect to FIGS. 10-13B. In theexample of FIG. 9, it is assumed that the doped semiconductornanophosphors are doped or otherwise embedded in the material formingthe light transmissive solid 176. For example, if formed of a curedsilicon gel, the doped semiconductor nanophosphors dispersed throughoutthe hardened gel, by mixing within the gel before curing. The phosphorsmay be fairly widely dispersed throughout the solid 176 to minimizevisible discoloration caused by the phosphors when the device is off.

Hence, in this example, the solid 176 is a single integral piece oflight transmissive material, that also incorporates the dopedsemiconductor nanophosphors. For optical efficiency, it is desirable forthe solid structure 176 to have a high transmissivity with respect tolight of the relevant wavelengths processed within the optical cavity172 and/or a low level of light absorption with respect to light of suchwavelengths.

The fixture or light engine 171 also includes the reflector 173, whichhas a diffusely reflective interior surface 173 s extending over atleast a substantial portion of the outer surface of the lighttransmissive structure 176, in this case over the contoured outersurface 176 c although it could extend over some portion or portions ofthe angled coupling surface 176 p not expected to receive light inputfrom the emitters 151. The surface 176 c is roughened for example byetching. For optical efficiency, however, the surface texture shouldprovide only a minimal air gap between the diffusely reflective interiorsurface 173 s of the reflector 173 and the corresponding portion(s) ofthe contoured outer surface 176 c of the light transmissive structure176. The diffuse reflective surface 173 s forms an optical integratingcavity from and/or encompassing the volume 172 of the light transmissivestructure 176, with an optical aperture 174 formed from a portion or allof the aperture surface 180 of the light transmissive structure 176.

It is desirable that the diffusely reflective surface(s) 173 s of thereflector 173 have a highly efficient reflective characteristic, e.g. areflectivity equal to or greater than 90%, with respect to the relevantwavelengths. Diffuse white materials exhibiting 98% or greaterreflectivity are available. Although other materials may be used,including some discussed above relative to earlier examples, theillustrated example of FIG. 9 uses WhiteOptics™. The WhiteOptics™reflector 173 is approximately 97% reflective with respect to thevisible white light from the LED type solid state emitters 151. Ofcourse, Valar™, Spectralon™, and Duraflect™ and other materials, asdiscussed earlier relative to FIG. 6A could be used to form thereflector 173. In the example, the entire inner surface 173 s of thereflector 173 is diffusely reflective, although those skilled in the artwill appreciated that one or more substantial portions may be diffuselyreflective while other portion(s) of the surface 173 s may havedifferent light reflective characteristics, such as a specular orsemi-specular characteristic.

At least a portion of the aperture surface 180 of the light transmissivestructure 176 serves as a transmissive optical passage or effective“optical aperture” 174 for emission of integrated light, from theoptical integrating volume 172, in a direction to facilitate theparticular general lighting application in the region or area to beilluminated by the light fixture (generally downward and/or outward fromthe fixture in the orientation of FIG. 9). The entire surface 180 of thesolid structure 176 could provide light emission. However, the exampleof FIG. 9 includes a mask 179 having a reflective surface facing intothe optical integrating volume 172, which somewhat reduces the surfacearea forming the transmissive passage to that portion of the surfaceshown at 174. The optical volume 172 operates as an optical integratingcavity (albeit one filled with the light transmissive solid of structure176 impregnated with the remote doped semiconductor nanophosphors); andthe portion 174 for light emission forms the optical aperture of thatcavity, to provide a virtual source of highly uniform white light atthat aperture similar to that of the aperture in the example of FIG. 6A.

As noted, the surface of the mask 179 that faces into the opticalintegrating volume 172 (faces upward in the illustrated orientation) isreflective. That surface may be diffusely reflective, much like thesurface 173 s, or that mask surface may be specular, quasi specular orsemi-specular. Other surfaces of the mask 179 may or may not bereflective, and if reflective, may exhibit the same or differenttypes/qualities of reflectivity than the surface of the mask 179 thatfaces into the optical integrating volume 172. In one configuration, thesurface of the mask 179 that faces into the optical integrating volume172 might be diffusely reflective (having reflective properties similarto those of reflective surface 173 s), whereas the surface of the maskfacing inward/across the aperture 174 might be specular. Specularreflectivity across the aperture reduces reflection back through theaperture into the integrating volume due to diffuse reflection thatmight otherwise occur if that portion of the mask exhibited a diffusereflectivity.

In the example, the light fixture 171 also includes one or more of thenear UV light solid state light emitters 151. Although the near UV lightcould be anywhere within the 380-420 nm range, for discussion purpose,the exemplary fixture 171 uses sources 151 rated to emit 405 nmelectromagnetic energy in the near UV range. The light emitters 151 areheld against the angled peripheral optical coupling surface 176 p, tosupply near UV light through that surface into the interior volume 172formed by the light transmissible structure 176 to excite the embeddedphosphors. There may be some minimal air gap between the emitter outputand the optical coupling surface 176 p. However, to improve out-couplingof the near UV light from the emitters 151 into the light transmissivesolid structure 176, it may be helpful to provide an optical grease,glue or gel between the peripheral optical coupling surface 176 p andthe output of each solid state light emitter 151. This materialeliminates any air gap and provides refractive index matching relativeto the material of the relevant portion of the light transmissivestructure 176, for example, to the material forming the angledperipheral optical coupling surface 176 p.

The exemplary light fixture or engine 171 also includes a flexiblecircuit board 181. The flexible circuit board 181 has a mounting sectionor region 181 p that typically will be at least substantially planar(and is therefore referred to herein as a “planar” mounting section) forconvenience in this example. The planar mounting section 181 p of theflexible circuit board 181 has an inner peripheral portion. In thisexample, the lateral shape of the solid forming the light transmissivestructure 176 is circular. The inner peripheral portion of the flexiblecircuit board 181 has a shape substantially similar shape, that is tosay a circular shape in the example. The circular inner peripheralportion of the flexible circuit board 181 has a size slightly largerthan the circular outer peripheral portion at the edge between thesurfaces 176 c and 176 p of the light transmissive structure 176. Theflexible circuit board includes a strip 181 e, extending away from theplanar mounting section, for providing electrical connection(s) to thedriver circuitry.

The flexible circuit board 181 also has flexible tabs 181 t attached toand extending from the inner peripheral region of the flexible circuitboard 181. As noted earlier, the number and type of LED type solid statelight emitters 151 used in the fixture 171 are selected so as to producelight intensity sufficient for a general lighting application of thefixture 171. The near UV light emitters 151 are mounted on the tabs 181t. At least one of the solid state light emitters 151 is mounted on afirst surface of each of the tabs 181 t of the flexible circuit board181, in this example, although some tabs could be empty or carry otherelements such as a light sensor instead of a LED.

The fixture 171 also includes a heat sink member 183. The heat sinkmember 183 is constructed of a material with good heat conductionproperties and sufficient strength to support the flexible circuit boardand associated LED light emitters, typically a metal such as aluminum.Although not shown for simplicity, cooling fins may be coupled to theheat sink member 183, for example, as part of one or more additionalaluminum housing components.

The heat sink member 183 has an inner peripheral portion ofsubstantially similar shape and of a size slightly larger than the outerperipheral portion of the light transmissive structure 176. In thiscase, the heat sink member 183 has a circular inner peripheral portionbut with a surface at a slant corresponding to the angle of surface 176p. The obtuse angle of the peripheral optical coupling surface 176 pwith respect to the optical aperture surface 180 of light transmissivestructure is approximately 120° (interior angle with respect to thehorizontal in the illustrated orientation is 60°, and angle of thesurface cross section relative to the vertical in the illustratedorientation is 30°). Hence, although the inner peripheral portion of theheat sink member 183 has a somewhat larger diameter than the outerperipheral portion of the light transmissive structure 176, the innersurface of the heat sink member 183 is machined to have an angle ofapproximately 120° with respect to the optical aperture surface 180(interior angle with respect to the horizontal in the illustratedorientation of FIG. 9 is 60°, and angle of the surface cross sectionrelative to the vertical in the illustrated orientation of FIG. 9 is30°).

The ring shaped heat sink member 183 in the example is a single solidmember, for example, formed of aluminum. Those skilled in the art willrealize that other configurations may be used. The opposite side of heatsink member 183 may have a ring-shaped indentation for mating with themask 179 (FIG. 9). The exemplary heat sink also includes one or moreposts extending outward from the main part of the ring. Each post has ascrew or bolt hole for passage of a bolt or similar fastener, for use inthe assembly of the light engine 171 together with other housingcomponents (not shown).

As assembled to form the light fixture or engine 171, the planarmounting section 181 p of the flexible circuit board 181 is mounted onan attachment surface of the heat sink member 183 having an inner edgecorresponding to the junction between angled inner surface and themounting surface. In the illustrated downlight orientation (FIG. 9),that attachment surface of the heat sink member is on the top side ofthe heat sink member. The mounting section 181 p of the flexible circuitboard 181 may be attached to the planar attachment surface of the heatsink member 183 by an adhesive or glue or by any other cost-effectivemeans.

The flexible tabs 181 t are bent at a substantial angle with respect tothe mounting section of the heat sink member 181, around the inner edgeof that surface, by pressure of the near UV solid state emitters 151mounted on the tabs 181 t against the outer peripheral coupling surface176 p of the light transmissive structure 176. In the illustrateddownlight orientation (FIG. 9), each tab will bend to an angleapproximately the same as the angle of the surfaces that it fitsbetween, in this case approximately 120° with respect to the opticalaperture surface 180 (interior angle with respect to the horizontal inthe illustrated orientation of FIG. 9 is 60°, and angle of the surfacecross section relative to the vertical in the illustrated orientation ofFIG. 9 is 30°).

The first surface of a tab 181 t supports a near UV solid state lightemitter 151 and receives heat from the emitter. The tab 181 t isconstructed to conduct the heat from the near UV solid state lightemitter 151 to its opposite or second surface, for example, by inclusionof heat conductive surface pads and vias through the tab. The secondsurface of each respective one of the tabs provides heat transfer to theheat sink member 183, to permit heat transfer from each solid stateemitter on each respective tab to the heat sink member.

In the example of FIG. 9, the fixture or light engine 171 also includesthermal interface material (TIM) 182 positioned between the secondsurface of each tab 181 t and a corresponding inner surface of the heatsink member 183. The TIM 182 provides electrical insulation between thetabs 181 t and the heat sink member 183, for example, for animplementation in which the heat slug of the near UV light emitter 151is conductive. The TIM 182, however, also provides thermal conductivityto the heat sink member 183. In the examples, pressure created bycontact of the solid state light emitters 151 with the angled opticalcoupling surface 176 p along the outer peripheral portion of the lighttransmissive structure 176 compresses the TIM 182 against the surface ofthe heat sink member 183.

The positioning of each near UV light emitter 151 provides anorientation in which a central axis of emission of the respective lightemitter (shown as an arrow from each LED in FIG. 9) is at a substantialangle with respect to the perpendicular axis of the aperture 174 and/orof the aperture surface 180 of the light transmissive structure 176. Theangle of emission with respect to the aperture axis may be approximatelyperpendicular (90°). In this example (FIG. 9), however, the couplingsurface 176 p is at an angle so that the central axis of emission of therespective near UV light emitter 151 is directed somewhat more away fromthe optical aperture 174 and/or the aperture surface 180 of the lighttransmissive structure 176. Since, the central axis of emission of therespective light emitter 151 is substantially perpendicular to thecoupling surface 176 p, and the coupling surface 176 p forms an obtuseangle with respect to the aperture surface 180, the central axis ofemission of the respective light emitter 151 in this example is at anacute angle away from the aperture surface 180.

Although other angles may be used, the coupling surface 176 p in theexample forms an angle of approximately 120° with respect to theaperture surface 180, therefore the angle between the central axis ofemission of the respective near UV light emitter 151 and the aperturesurface 180 in this example is approximately 30°. From anotherperspective, this results in the central axis of emission of therespective solid state near UV light emission source 151 havingapproximately a 60° angle with respect to the perpendicular axis of theaperture 174 and/or of the aperture surface 180 of the lighttransmissive structure 176.

This angle of emission of near UV light from the solid state sources 151reduces the amount of direct light emissions that impact the opticalaperture surface 180 at a steep angle. At least in the region 174forming the actual optical aperture, those direct light emissions thatdo impact the surface 180 impact at a relatively shallow angle. Theportion 174 of the aperture surface 180 of the light transmissive solid176 that serves as the optical aperture or light passage out of theoptical integrating volume 172 exhibits total internal reflection withrespect to near UV light reaching that surface directly from the solidstate sources 151, and that total internal reflection reflects directlight emission hitting the surface at a shallow angle back into theoptical integrating volume 172. In contrast, white light from thephosphor emissions and light that has been diffusely reflected fromregions of the surface 173 s, which arrive at larger angles to thesurface 180 are not subject to total internal reflection and passthrough portion 174 of the aperture surface 180 that forms the opticalaperture.

The mask 179 therefore can be relatively small in that it only needs toextend far enough out covering the aperture surface 180 of the lighttransmissive solid 176 so as to block direct view of the LEDs 151through the aperture 174 and to reflect those few direct emissions ofthe solid state light sources 151 that might otherwise still impact thesurface 180 at too high or large an angle for total internal reflection.In this way, the combination of total internal reflection in the portion174 of the surface 180 of the solid 176 together with the reflectivemask 179 reflects all or at least substantially all of the direct nearUV emissions from the light emitters 151, that otherwise would miss thereflector surface 173 s, back into the optical integrating volume 172.Stated another way, a person in the area or region illuminated by thefixture 171 would not perceive the LED sources at 151 as visibleindividual light sources. Instead, virtually all light input to thevolume from the solid state emitters 151 will diffusely reflect one ormore times from the surface 173 s before emergence through the apertureportion 174 of the surface 180 of the solid 176. This will insure one ormore passes of the near UV light though the solid 176 containing thedoped semiconductor nanophosphors, for excitation of those phosphors.Since the surface 173 s provides diffuse reflectivity, the volume 172acts as an optical integrating cavity so that the portion 174 of thesurface 180 forms an optical aperture providing a substantially uniformvirtual source output distribution of integrated white light (e.g.substantially Lambertian), mainly from the phosphor emissions by thedoped semiconductor nanophosphors.

It is possible to utilize the total internal reflection to reduce thesize of the mask 179 or otherwise enlarge the effective aperture (sizeof the optical passage) at 174 through which light emerges from theintegrating volume 172. Due to the larger optical aperture or passage,the fixture 171 can actually emit more light with fewer averagereflections within the integrating volume 172, improving efficiency ofthe fixture in comparison to prior fixtures that utilized cavities andapertures that were open to air.

In the example of FIG. 9, the solid state source devices 151 emit 405 nmnear UV energy mostly toward the inner surface 173 s of the reflector173. 405 nm light emitted from a solid state device 151 in otherdirections is reflected by the inner surface of the mask 179 or totalinternal reflection at the optical aperture portion 174 of the surface180 towards the inner reflective surface 173 s of the reflector 173. Asthe 405 nm light from the emitting devices 151 and reflected from themask and the aperture portion 174 of the surface 180 passes through thelight transmissive solid 176, it excites the doped semiconductornanophosphors in the solid 176. Any 405 nm light that has not yetexcited a phosphor reflects from the diffusely reflective surface 173 sof the reflector 173 back through the solid 176 and may excite the dopedsemiconductor nanophosphors in the solid 176 on the second or subsequentpass.

Light produced by the phosphor excitations, is emitted in all directionswithin the cavity 172. Much of that light is also reflected one or moretimes from the inner surface 173 s of reflector 173, the inner surfaceof the mask 179 and the total internal reflection at the surface 55. Atleast some of those reflections, particularly those off the innersurface 173 s of reflector 173, are diffuse reflections. In this way,the cavity 172 integrates the light produced by the various phosphoremissions into a highly integrated light for output via the opticalaperture 174 (when reaching the surface at a steep enough angle toovercome the total internal reflection).

This optical integration by diffuse reflection within the cavity 172integrates the light produced by the nano-phosphor excitation to formintegrated light of the desired characteristics at the optical aperture174 providing a substantially uniform output distribution of integratedlight (e.g. substantially Lambertian) across the area of the aperture.As in the earlier examples, the particular doped semiconductornanophosphors in the fixture 171 result in a light output that is atleast substantially white and has a color rendering index (CRI) of 75 orhigher. The white light output of the solid state light fixture 171through optical aperture 174 exhibits color temperature in one of thespecified ranges along the black body curve. The doped semiconductornanophosphors may be selected and mixed to stack the emissions spectrathereof so that the white light output through optical aperture 174exhibits color temperature of 2,725±145° Kelvin. Alternatively, thedoped semiconductor nanophosphors may be selected and mixed to stack theemissions spectra thereof so that the white light output through opticalaperture 174 exhibits color temperature of 3,045±175° Kelvin. As yetanother alternative, the doped semiconductor nanophosphors may beselected and mixed to stack the emissions spectra thereof so that thewhite light output through optical aperture 174 exhibits colortemperature of 3,465±245° Kelvin. As a further alternative, the dopedsemiconductor nanophosphors may be selected and mixed to stack theemissions spectra thereof so that the white light output through opticalaperture 174 exhibits color temperature of and 3,985±275° Kelvin.

The effective optical aperture at 174 forms a virtual source of thelight from lighting apparatus or fixture 171, which exhibits arelatively Lambertian distribution across the virtual source, as in theearlier examples. When the fixture illumination is viewed from the areailluminated by the combined light, the virtual source at 174 appears tohave substantially infinite depth of the integrated light. Also, thevisible intensity is spread uniformly across the virtual source, asopposed to one or more individual small point sources of higherintensity as would be seen if the one or more solid state sources weredirectly observable without sufficient diffuse processing beforeemission through an aperture. Again, the optical integration in thevolume 172 reduces or eliminates pixilation and striation in the lightoutput via the aperture 174. The light output exhibits a relatively lowmaximum-to-minimum intensity ratio across that region 174. In virtualsource examples discussed herein, the virtual source light outputexhibits a maximum to minimum ratio of 2 to 1 or less over substantiallythe entire optical output area. The area of the virtual source is atleast one order of magnitude larger than the area of the point sourceoutput(s) of the near UV light solid state light emitter(s) 151. In thisway, the diffuse optical processing may convert a single small area(point) source of light from a solid state emitter 151 to a broader areavirtual source of white light at the region 174. The diffuse opticalprocessing can also combine a number of such point source outputs toform one virtual source at the region of optical aperture 174.

As discussed in the earlier example of FIG. 6A, the optical aperture 174at the surface 180 of the solid type light transmissive structure 176may serve as the light output if the fixture 171, directing opticallyintegrated light of relatively uniform intensity distribution to adesired area or region to be illuminated in accord with a particulargeneral lighting application of the fixture. In such an arrangement, thefixture may include a trim ring or the like (not shown) covering some orall of the exposed components (but not the optical aperture 174).Although not shown in this example, there could be a lens, filter ordiffuser (e.g. a holographic element) to help distribute the outputlight at the aperture 174.

However, the light engine example 171 of FIG. 9 may be used with otherelements to form a commercial fixture. A commercial fixture producttherefore might include the elements of the light engine, including thereflector 173, emitters 151, light transmissive structure 176 (withaperture surface 180), mask 179, heat sink ring 183, etc. Such a fixturemight then further include upper and lower housings with cooling fins aswell as a deflector in the lower housing. The deflector would be similarto the deflector 65 in the example of FIG. 6A.

As in the earlier examples, the near UV solid state light sources 151 inthe example of FIG. 9 may be driven by any known or available circuitrythat is sufficient to provide adequate power to drive the emitters atthe level or levels appropriate to the particular lighting applicationof each particular fixture. Analog and digital circuits for controllingoperations and driving the emitters are contemplated. Those skilled inthe art should be familiar with various suitable circuits.

FIG. 10 is a cross-sectional view of an alternative construction of thelight transmissive structure, here identified by number 176′. The lighttransmissive structure 176′ is formed of two pieces 191 and 192, oflight transmissive solid material. The material should be highlytransmissive and exhibit low absorption with respect to the relevantlight wavelengths, as discussed with regard to the solid structure 176in the example of FIG. 9. Although other materials could be used, inthis example, the two pieces 191 and 192 of the light transmissivestructure 176′ are formed of an appropriate glass. The glass may behighly transmissive and have low absorption, with respect to light ofthe relevant wavelengths. For example, the glass used may be at least aBK7 grade or optical quality of glass, or equivalent. In such animplementation, the highly transmissive glass exhibits 0.99 internaltransmittance or better (BK7 exhibits a 0.992 internal transmittance).

External properties of the structure 176′ will be similar to those ofthe structure 176 in the earlier example. For example, the contouredsurface, at least in regions where there is no contact to a solid statelight emitter, may have a roughened or etched texture. The outerperipheral region of the structure may be beveled or angled in-betweenthe upper contoured region and the aperture surface (as shown 176 p inFIG. 9). However, for ease of illustration, here (and in FIGS. 11 to13B), the angled coupling surface is omitted, as might be the case ifthe LEDs were abutted against the light transmissive structure in amanner to emit light approximately in parallel to the aperture surface180 (or perpendicular to the axis of the light transmissive structure).

Opposing surfaces of the two pieces 191 and 192 of the lighttransmissive structure 176′ are contoured, to mate with each otheraround the periphery of the junction between the pieces but form a gap193 between the two surfaces. The two pieces 191 and 192 of the lighttransmissive structure 176′ may be shaped to provide the gap 193 atvarious locations and/or for the gap to have various shapes. Fordiscussion purposes, the drawing shows the gap substantially parallel tothe aperture surface 180 at a level spaced from that surface 180, andextending across a substantial portion but not all of the hemisphericalstructure at that level. The gap 193 contains the semiconductornanophosphor material for excitation by near UV light energy. There maybe some additional space in the gap, but in the exemplary structure176′, the material that includes the semiconductor nanophosphors atleast substantially fills the volume of the gap 193. The semiconductornanophosphors in the material are similar to those of the material 16 inthe examples of FIGS. 1 to 4.

It may desirable to encapsulate the semiconductor nanophosphor materialin a manner that blocks out oxygen. Hence, in the example of FIG. 10,the two solid pieces or sections 191, 192 of the light transmissivestructure 176′ are both glass. The glass used is at least a BK7 grade oroptical quality of glass, or equivalent. It is desirable for the solid,in this case the glass, to have a high transmissivity with respect tolight of the relevant wavelengths processed within the cavity 172 and/ora low level of light absorption with respect to light of suchwavelengths. Various sealing arrangements may be provided around theedges of the chamber formed by the gap 193, to maintain a good oxygenbarrier to shield the semiconductor nanophosphors from oxygen, whichotherwise degrades the semiconductor nanophosphors reducing the usefullife of the semiconductor nanophosphors.

The semiconductor nanophosphor(s) may be provided in the gap 193 in theform of an ink or paint applied to one or both of the mating surfaces ofthe pieces 191 and 192. However, in the example of FIG. 10, thesemiconductor nanophosphors in the gap 193 are carried in a binder orother medium so as to fill the gap 193. The medium preferably is highlytransparent (high transmissivity and/or low absorption to light of therelevant wavelengths). Although alcohol, vegetable oil or other mediamay be used, in the example of FIG. 10, the medium may be a siliconmaterial. If silicone is used, it may be in gel form or cured into ahardened form in the finished light fixture product.

The light transmissive structure 176′ would be incorporated into a lightengine much like that shown in FIG. 9. In such an implementation, thesolid state sources would be sources similar to source 11 in FIGS. 1 and2, which emit 405 nm light or other light in the 380-420 nm range.Electrically, the sources could be implemented, connected and driven inthe manner shown in FIG. 14 or using any other suitable power supply anddriver circuitry. As in FIG. 9, the light transmissive structure 176′together with the reflector would form an optical integrating volume.Like the examples of FIGS. 6A and 9, the near UV light from the sourceswould excite the semiconductor nanophosphors, in this case in the gap193. The cavity would integrate the light for emission through a portionof surface 180 that forms the actual optical aperture or light passagefor emission of integrated light from the cavity.

Again, the light produced by excitation of the semiconductornanophosphor and as integrated in and output from the cavity would be atleast substantially white and would have a CRI of 75 or better. Theresulting light produced by the semiconductor nanophosphors and emittedfrom the cavity also would exhibit color temperature in one of thefollowing four specific ranges along the black body curve: 2,725±145°Kelvin; 3,045±175° Kelvin; 3,465±245° Kelvin; and 3,985±275° Kelvin.

As noted, the present discussion encompasses a variety of differentstructural configurations for the light transmissive structure. Asanother approach (FIG. 11), instead of using a solid structure (e.g.FIG. 9) or solid structure with a gap or chamber for a semiconductornanophosphor (FIG. 10), the light transmissive structure may comprise acontainer. Although the container could be filled with a gas, in theillustrated example, the container is filled with a liquid. The liquidthen contains the semiconductor nanophosphors, particularly dopedsemiconductor nanophosphors. FIG. 11 is an example of a lighttransmissive structure 176″ constructed in such a manner.

As shown in FIG. 11, the light transmissive structure 176″ includes acontainer. Although other container structures may be used, for ease ofillustration, the exemplary container is formed of a plate 194 and ahemispherical dome 195. As in the solid structure examples, theseelements should exhibit high transmissivity and low absorption withrespect to light of the relevant wavelengths, and there may or may notbe an angled surface for light input coupling around the periphery.Although other materials could be used, to provide good containment andan excellent oxygen barrier, the example of FIG. 11 uses glass for theplate 194 and the dome 195, for example BK7 glass or equivalent.

In the example of FIG. 11, the container formed by the plate 194 and thedome 195 is filled with a liquid 196. The liquid 196 containssemiconductor nanophosphors, of the same types or categories as in thevarious earlier examples, which are excited by near UV light to producewhite light of the properties specified herein. Those skilled in the artwill recognize that there are various ways to join the components of thecontainer, such as 194 and 195, together to form a liquid tight and airtight seal, and that there are various ways to fill the container withthe desired liquid in a manner that eliminates at least substantiallyall oxygen bearing gases. In the illustrated example, the liquid 196substantially fills the volume of the container formed by the elements194 and 195, with little or no gas entrained in the liquid 196.

Semiconductor nanophosphors are often produced in solution. Near thefinal production stage, the semiconductor nanophosphors are contained ina liquid solvent. In the example of FIG. 11, such a liquid solutioncould be used as the solution 196. However, the solvents tend to berather volatile/flammable, and other liquids such as water or vegetableoil may be used. The semiconductor nanophosphors may be contained in adissolved state in solution, or the liquid and semiconductornanophosphors may form an emulsion. The liquid itself may betransparent, or the liquid may have a scattering or diffusing effect ofits own (caused by an additional scattering agent in the liquid or bythe translucent nature of the particular liquid).

The container formed by the plate 194 and the dome 195, together withthe liquid 196, substantially fill the optical volume 172, of the lightfixture that incorporates the structure 176″. External properties of thestructure 176″ will be similar to those of the structure 176 in theearlier example of FIG. 9. For example, the contoured surface, at leastin regions where there is no contact to a solid state light emitter, mayhave a roughened or etched texture. Such an implementation would operatein a manner similar to the implementations of FIGS. 6A, 9 and 10.However, the liquid material may offer added operational efficienciesover implementations that entrain the semiconductor nanophosphorcrystals in solid materials. Also, the dispersal in a clear or somewhatwhite/opaque liquid may tend to hide the coloration of the nanocrystalswhen not excited (while the lighting system is OFF).

FIG. 12 is a cross-sectional view of yet another alternativeconstruction of the light transmissive structure, here identified bynumber 176′″, which incorporates a semiconductor nanophosphor bearingmaterial. For example, the structure may utilize two pieces of the lighttransmissive solid with a gap therebetween, filled with thesemiconductor nanophosphor bearing material, similar to the structure ofFIG. 10. However, rather than positioning the semiconductornanophosphors somewhat near the middle of the volume of the lighttransmissive structure as in FIG. 12, the arrangement of FIG. 12 locatesthe semiconductor nanophosphors near or at the optical aperture surfaceof the light transmissive structure.

In the example of FIG. 12, the light transmissive structure 176′″comprises a main section 197, which is essentially similar to the solid176 the example of FIG. 9. However, the light transmissive structure176′″ also includes a section 198 containing the semiconductornanophosphors and forming the aperture surface 180. The section 198 maybe constructed in a number of different ways, two examples of which arerepresented by the enlarged detail sections (corresponding approximatelyto the region encircled at B-B in FIG. 12) of FIGS. 13A and 13B.

For example, the pieces of the light transmissive solid with a gaptherebetween may consist of the main section 197 and an additional lighttransmissive member 681 (FIG. 15A). In such an arrangement, thesemiconductor nanophosphor containment section 198 a includes the member681 and the gap formed between that member and the face of the mainsection 197. The gap is filled with a semiconductor nanophosphormaterial 199, such as discussed above relative to several of the earlierexamples. The member 681 is attached to the section 197 in a manner toprovide an air tight seal. In such an arrangement, the main section 197and the light transmissive member 681 would typically be formed ofglass, to insure that no air reaches the semiconductor nanophosphorcontained in the gap.

In the other example (FIG. 13B), the semiconductor nanophosphorcontainment section 198 b includes two pieces of the light transmissivesolid members 682 and 683 with a gap therebetween, filled withsemiconductor nanophosphors or a semiconductor nanophosphor material199. In this arrangement, the solid element 682 is attached to orpositioned against/adjacent to the face of the main section 197. The twolight transmissive solid members 682 and 683 typically would be glassand would be sealed to contain the semiconductor nanophosphor in an airtight manner. However, with this arrangement, it may be feasible to usea different light transmissive material for the main section 197, asthat section need not be impervious to gas leakage.

Again, in the examples of FIGS. 12, 13A and 13B, the light produced byexcitation of the semiconductor nanophosphors and as integrated in andoutput from the cavity via an aperture portion of surface 180 would beat least substantially white and would have a CRI of 75 or better. Theresulting light produced by the semiconductor nanophosphor and emittedfrom the optical aperture of the cavity also would exhibit colortemperature in one of the following specific ranges along the black bodycurve: 2,725±145° Kelvin; 3,045±175° Kelvin; 3,465±245° Kelvin; and3,985±275° Kelvin.

The solid state sources in any of the fixtures discussed above may bedriven by any known or available circuitry that is sufficient to provideadequate power to drive the semiconductor devices therein at the levelor levels appropriate to the lighting application of each particularfixture. Analog and digital circuits for controlling operations anddriving the emitters are contemplated, and power may be derived from DCor AC sources. Those skilled in the art should be familiar with varioussuitable circuits. For many white light applications, the controlcircuitry may offer relatively simple user control, e.g. just ON/OFF orpossibly with some rudimentary dimmer functionality. For example, in ageneral lighting application, a triac dimmable driver may be used toprovide DC drive current from an AC power source. Such a driver offersON/OFF control as well as level setting control responsive to triacvariations of the AC waveform from a standard type dimmer unit.

However, for completeness, we will discuss an example of suitablecircuitry, offering relatively sophisticated control capabilities, withreference to FIG. 14. That drawing figure is a block diagram of anexemplary solid state lighting system 100, including the controlcircuitry and the LED type sold state light sources. The LEDs andpossibly some of the other electronic elements of the system could beincorporated into a fixture in any of the examples discussed above, withthe LEDs shown in FIG. 14 serving as the various solid state sources ofthe 405 nm near UV light energy in the exemplary fixture. The circuitryof FIG. 14 provides digital programmable control of the light.

In the light engine 101 of FIG. 14, the set of solid state sources ofnear UV light takes the form of a LED array 111. A circuit similar tothat of FIG. 14 has been used in the past, for example, for RGB typelighting (see e.g. U.S. Pat. No. 6,995,355). The same circuit is beingused here with near UV LEDs but with different programming, to providestep-wise intensity control in a white lighting system having asubstantial number of LEDs.

The array 111 comprises one or more 405 nm LEDs arranged in each of fourdifferent strings forming lighting channels C1 to C4. Here, the array111 includes three initially active strings of LEDs, represented by LEDblocks 113, 115 and 117. The strings may have the same number of one ormore LEDs, or the strings may have various combinations of differentnumbers of one or more LEDs. For purposes of discussion, we will assumethat the first block or string of LEDs 113 comprises 6 LEDs. The LEDsmay be connected in series, but in the example, two sets of 3 seriesconnected LEDs are connected in parallel to form the block or string of6 405 nm near UV LEDs 113. The LEDs may be considered as a first channelC1, for control purposes discussed more later.

In a similar fashion, the second block or string of LEDs 115 comprises 8405 nm LEDs. The 8 LEDs may be connected in series, but in the example,two sets of 4 series connected LEDs are connected in parallel to formthe block or string of 8 405 nm near UV LEDs 115. The third block orstring of LEDs 117 comprises 12 LEDs. The 12 LEDs may be connected inseries, but in the example, two sets of 6 series connected LEDs areconnected in parallel to form the block or string of 12 405 nm near UVLEDs 117. The LEDs 115 may be considered as a second channel C, whereasthe LEDs 117 may be considered as a third channel C3 for controlpurposes discussed more later.

The LED array 111 in this example also includes a number of additionalor ‘other’ LEDs 119. Some implementations may include various colorLEDs, such as specific primary color LEDs, IR LEDs or UV LEDs, forvarious ancillary purposes. Another approach might use the LEDs 119 fora fourth channel of 405 nm LEDs to further control intensity in astep-wise manner. In the example, however, the additional LEDs 119 are‘sleepers.’ Initially, the LEDs 113-117 would be generally active andoperate in the normal range of intensity settings, whereas sleepers 119initially would be inactive. Inactive LEDs are activated when needed,typically in response to feedback indicating a need for increased output(e.g. due to decreased performance of some or all of the originallyactive LEDs 113-117). The set of sleepers 119 may include any particularnumber and/or arrangement of the LEDs as deemed appropriate for aparticular application.

Each string may be considered a solid state light emitting element or‘source’ coupled to supply near UV light to the cavity or other fixtureoptic so as to pump or excite the semiconductor nanophosphor, where eachsuch element or string comprises one or more light emitting diodes(LEDs) serving as individual solid state emitters. In the example ofFIG. 14, each such element or string 113 to 119 comprises a plurality ofthe 405 nm LEDs.

The electrical components shown in FIG. 14 also include a LED controlsystem 120. The control system 121 includes LED driver circuits for thevarious LEDs of the array 111 as well as a micro-control unit (MCU) 129.In the example, the MCU 129 controls the LED driver circuits viadigital-to-analog (D/A) converters. The driver circuit 121 drives theLEDs 113 of the first channel C1, the driver circuit 123 drives the LEDs115 of the second channel C2, and the driver circuit 125 drives the LEDs117 of the third channel C3. In a similar fashion, when active, thedriver circuit 127 provides electrical current to the other LEDs 119.

Although current modulation (e.g. pulse width modulation) or currentamplitude control could be used, this example uses constant current tothe LEDs. Hence, the intensity of the emitted light of a given near UVLED in the array 111 is proportional to the level of current supplied bythe respective driver circuit. The current output of each driver circuitis controlled by the higher level logic of the system, in this case, bythe programmable MCU 129 via the respective A/D converter.

The driver circuits supply electrical current at the respective levelsfor the individual sets of 405 nm LEDs 113-119 to cause the LEDs to emitlight. The MCU 129 controls the LED driver circuit 121 via a D/Aconverter 122, and the MCU 129 controls the LED driver circuit 123 via aD/A converter 124. Similarly, the MCU 129 controls the LED drivercircuit 125 via a D/A converter 126. The amount of the emitted light ofa given LED set is related to the level of current supplied by therespective driver circuit.

In a similar fashion, the MCU 129 controls the LED driver circuit 127via the D/A converter 128. When active, the driver circuit 127 provideselectrical current to the sleeper LEDs 119.

The LED driver circuits and the microcontroller 129 receive power from apower supply 131, which is connected to an appropriate power source (notseparately shown). For most general lighting applications, the powersource will be an AC line current source, however, some applications mayutilize DC power from a battery or the like. The power supply 131provides AC to DC conversion if necessary, and converts the voltage andcurrent from the source to the levels needed by the LED driver circuitsand the MCU 129.

A programmable microcontroller or microprocessor, such as the MCU 129,typically includes or has coupled thereto random-access memory (RAM) forstoring data and read-only memory (ROM) and/or electrically erasableread only memory (EEROM) for storing control programming and anypre-defined operational parameters, such as pre-established light datafor the current setting(s) for the strings of LEDs 113 to 119. Themicrocontroller 129 itself comprises registers and other components forimplementing a central processing unit (CPU) and possibly an associatedarithmetic logic unit. The CPU implements the program to process data inthe desired manner and thereby generates desired control outputs. Themicrocontroller 129 is programmed to control the LED driver circuits 121to 127 via the A/D converters 122 to 128 to set the individual outputintensities of the 405 nm LEDs to desired levels, and in this circuitexample to implement a step-wise system intensity control by selectivelyactivating and deactivating strings of LEDs. For an ON-state of astring/channel, the program of the microcontroller 129 will set thelevel of the current to the desired level at or around the ratedcurrent, by providing an appropriate data input to the D/A converter forthe respective channel.

The electrical system associated with the fixture also includes adigital data communication interface 139 that enables communications toand/or from a separate or remote transceiver (not shown in this drawing)which provides communications for an appropriate control element, e.g.for implementing a desired user interface. A number of fixtures of thetype shown may connect over a common communication link, so that onecontrol transceiver can provide instructions via interfaces 139 to theMCUs 129 in a number of such fixtures. The transceiver at the other endof the link (opposite the interface 139) provides communications to thefixture(s) in accord with the appropriate protocol. Different forms ofcommunication may be used to offer different links to the user interfacedevice. Some versions, for example, may implement an RF link to apersonal digital assistant by which the user could select intensity orbrightness settings. Various rotary switches and wired controls may beused, and other designs may implement various wired or wireless networkcommunications. Any desired medium and/or communications protocol may beutilized, and the data communication interface 139 may receive digitalintensity setting inputs and/or other control related information fromany type of user interface or master control unit.

To insure that the desired performance is maintained, the MCU 129 inthis implementation receives a feedback signal from one or more sensors143. A variety of different sensors may be used, alone or incombination, for different applications. In the example, the sensors 143include a light intensity sensor 145 and a temperature sensor 147. TheMCU 129 may use the sensed temperature feedback in a variety of ways,e.g. to adjust operating parameters if an excessive temperature isdetected.

The light sensor 145 provides intensity information to the MCU 129. Avariety of different sensors are available, for use as the sensor 145.In a cavity optic such as in the fixture in the system 50 of FIG. 6A,the light sensor 145 might be coupled to detect intensity of theintegrated light either emitted through the aperture or as integratedwithin the optical cavity. For example, the sensor 145 may be mountedalongside the LEDs for directly receiving light processed within theoptic. The MCU 129 uses the intensity feedback information to determinewhen to activate the sleeper LEDs 119. The intensity feedbackinformation may also cause the MCU 129 to adjust the constant currentlevels applied to one or more of the strings 113 to 117 of 405 nm LEDsin the control channels C1 to C3, to provide some degree of compensationfor declining performance before it becomes necessary to activate thesleepers.

Control of the near UV LED outputs could be controlled by selectivemodulation of the drive signals applied to the various LEDs. Forexample, the programming of the MCU 129 could cause the MCU to activatethe A/D converters and thus the LED drivers to implement pulse width orpulse amplitude modulation to establish desired output levels for theLEDs of the respective control channels C1 to C3. Alternatively, theprogramming of the MCU 129 could cause the MCU to activate the A/Dconverters and thus the LED drivers to adjust otherwise constant currentlevels of the LEDs of the respective control channels C1 to C3. However,in the example, the MCU 129 simply controls the light output levels byactivating the A/D converters to establish and maintain desiredmagnitudes for the current supplied by the respective driver circuit andthus the proportional intensity of the emitted light from each givenstring of LEDs. For an ON-state of a string/channel, the program of theMCU 129 will cause the MCU to set the level of the current to thedesired level at or around the rated current, by providing anappropriate data input to the D/A converter for the particular channel.The LED light output is proportional to the current from the respectivedriver, as set through the D/A converter. The D/A converter willcontinue to output the particular analog level, to set the current andthus the LED output intensity in accord with the last command from theMCU 129, until the MCU 129 issues a new command to the particular D/Aconverter. While ON, the current will remain relatively constant. TheLEDs of the string thus output near UV light of a correspondingrelatively constant intensity. Since there is no modulation, it isexpected that there will be little or no change for relatively longperiods of ON-time, e.g. until the temperature or intensity feedbackindicates a need for adjustment.

The current for the different channels C1 to C3 and/or the sleeper LEDs119 may be different, e.g. if different numbers and/or types of LEDs areused, but where the LEDs in the array 111 are all of the same type, thecurrent for the different channels C1 to C3 and/or the sleeper LEDs 119in the ON state would all be approximately the same magnitude. For theOFF state of a particular string of LEDs 113 to 119, the MCU provides a0 data input to the D/A converter for the respective string of LEDs.

Setting of the ON-OFF states of the LED strings 113-117 provides forselective control of the overall number of near UV LEDs of the array 111that are ON in any given state. In the three main channel example (119being for a sleeper channel), it is possible to control the states ofthe LED strings 113-117 to provide eight different brightness steps from0 to 7, that is to say from all OFF (0 LEDs ON) to all 26 of the LEDsON.

For the step-wise intensity control, the MCU 129 will control eachdriver via its associated A/D converter so as to supply constant currentto the respective string of LEDs, at or around the rated current of theparticular set of LEDs. Based on feedback, the MCU may adjust the levelof the constant current somewhat, e.g. to compensate for some degree ofdegradation over time before it becomes necessary to activate thesleeper LEDs 119. In any case, the current level will remain within arange of the rated current for the particular string/channel of LEDs sothat those LEDs produce the rated near UV light out, for interactionwith the semiconductor nanophosphor in the fixture optic to generate thewhite light of the high CRI and desired color temperature, as discussedabove.

In the example, there are 8 possible system states or intensities, whichrange from 0 for full OFF up to 7 for maximum ON. To select among thestates, the communication interface 139 would receive a data signal froman input device, e.g. a user interface or a higher level automaticcontrol, and would supply at least 3-bits of intensity control data tothe MCU 129.

In the 0 state, all of the control channels C1 to C3 are OFF, and thusthere are no LEDs ON. Conversely, in the 7 state, all of the controlchannels C1 to C3 are ON, and thus all 26 of the near UV LEDs 113-117are ON and producing 405 nm light for excitation of the semiconductornanophosphor in the optic. The other states provide a series of stepsbetween full OFF and full ON. For example, at the brightness levelnumber 1, only the first control channel C1 is ON, and the otherchannels C2 and C3 are OFF. In that state, only the 6 LEDs of the firstcontrol channel C1 are ON. At the brightness level number 2, only thesecond control channel C2 is ON, and the other channels C1 and C3 areOFF. In that state, only the 8 LEDs of the second control channel C2 areON. Similarly, at the brightness level number 3, only the third controlchannel C3 is ON, and the other channels C1 and C2 are OFF. In thatstate, only the 12 LEDs of the third control channel C3 are ON. In thenext three states (brightness levels 4-6) different combinations of twochannels are ON concurrently. For example, at the brightness levelnumber 4, the first control channel C1 and the second control channel C2are both ON, but the other channel C3 is OFF. In that state, the 14 LEDsof the channels C1 and C2 are ON. At the brightness level number 5, thefirst control channel C1 and the third control channel C3 are both ON,but the other channel C2 is OFF. In that state, the 18 LEDs of thechannels C1 and C3 are ON. Similarly, at the brightness level number 6,the second control channel C2 and the third control channel C3 are bothON, but the other channel C1 is OFF. In that state, the 20 LEDs of thechannels C2 and C3 are ON.

The system can step up or down through the levels, in response toappropriate control inputs, e.g. received from a user interface element.Assuming that all of the LEDs generate approximately the same near UVlight output at the rated current setting, the system intensity will beproportional to the number of near UV LEDs ON at each level. Hence, inthe example, the possible brightness steps will correspond to the levelsof intensity at which 0, 6, 8, 12, 14, 18, 20, and 26 of the near UVLEDs are ON, respectively. The doped semiconductor nanophosphors convertnear UV light to the desired white light of the correspondingintensities.

In the example, assume that all of the LEDs in the array 111 are similartype near UV devices, e.g. each rated to produce 405 nm near UV light.All will have the same current rating at which they are all expected topump the semiconductor nanophosphor to output white light of a high CRIand particular color temperature. Since there is no pulse modulationchange, there is no potential to change a state which might otherwisecause perceptible flickering.

As noted earlier, the circuit of FIG. 14 also offers sleeper LEDs 119.With the channels C1 to C3 all ON, the system would operate at its ratedoutput level, but typically that is around 90% of the maximum outputpossible for the array 111, as the sleepers 119 will be OFF. If theintensity achieved by activation of the channels C1 to C3 drops, forexample as indicated by level of intensity detected by sensor 145, theMCU 129 can turn ON the string of sleepers 119, to return to the desiredperformance level. Sleepers 119 then could be always ON whenever thesystem is ON, and the MCU 129 would control intensity by ON-OFF controlof the LEDs on channels C1 to C3.

While the foregoing has described what are considered to be the bestmode and/or other examples, it is understood that various modificationsmay be made therein and that the subject matter disclosed herein may beimplemented in various forms and examples, and that the teachings may beapplied in numerous applications, only some of which have been describedherein. It is intended by the following claims to claim any and allapplications, modifications and variations that fall within the truescope of the present teachings.

1. A light fixture for a lighting application, comprising: a nearultraviolet (UV) solid state source, containing a semiconductor chip forproducing near UV electromagnetic energy in a range of 380-420 nm; amacro optic outside and coupled to the near UV solid state source, forreceiving and processing the near UV electromagnetic energy to produce alight output for the fixture; and at least one remote dopedsemiconductor nanophosphor associated with the macro optic and apartfrom the semiconductor chip, the remote doped semiconductor nanophosphorbeing of a type excited in response to near UV electromagnetic energy inthe range of 380-420 nm from the solid state source for re-emittingvisible light of a different spectrum, wherein: the visible light in theoutput for the fixture produced by near UV excitation of the remotedoped semiconductor nanophosphor has a color temperature of one of thefollowing ranges: 2,725±145° Kelvin; 3,045±175° Kelvin; 3,465±245°Kelvin; and 3,985±275° Kelvin.
 2. The light fixture of claim 1, whereinthe at least one remote doped semiconductor nanophosphor comprises: adoped semiconductor nanophosphor of a type excited in response to nearUV electromagnetic energy in the range of 380-420 nm for re-emitting redor orange light; a doped semiconductor nanophosphor of a type excited inresponse to near UV electromagnetic energy in the range of 380-420 nmfor re-emitting blue light; and a doped semiconductor nanophosphor of atype excited in response to near UV electromagnetic energy in the rangeof 380-420 nm for re-emitting green light.
 3. The light fixture of claim2, wherein the plurality of remote doped semiconductor nanophosphorsfurther comprises a doped semiconductor nanophosphor of a type excitedin response to near UV electromagnetic energy in the range of 380-420 nmfor re-emitting yellowish-green or greenish-yellow light.
 4. The lightfixture of claim 2, wherein the visible light output produced during thenear UV excitation of the doped semiconductor nanophosphors has a colorrendering index (CRI) of 75 or higher.
 5. The light fixture of claim 1,wherein the different spectrum has substantially no overlap withabsorption spectra of the doped semiconductor nanophosphor, the remotedoped semiconductor nanophosphor producing visible light in the outputfor the fixture from the fixture when excited.
 6. The light fixture ofclaim 2, wherein the plurality of remote doped semiconductornanophosphors further comprises a doped semiconductor nanophosphor of atype excited in response to near UV electromagnetic energy in the rangeof 380-420 nm for re-emitting yellow light.
 7. The light fixture ofclaim 6, wherein visible light output produced during the near UVexcitation of the doped semiconductor nanophosphors has a colorrendering index (CRI) of at least
 88. 8. The light fixture of claim 1,wherein the semiconductor chip of the near UV solid state source isconfigured for producing electromagnetic energy of 405 nm.
 9. The lightfixture of claim 1, wherein: the macro optic comprises a diffuser; andthe at least one remote doped semiconductor nanophosphor is located ator near a surface of the diffuser.
 10. The light fixture of claim 1,wherein: the macro optic comprises a reflector; and the at least oneremote doped semiconductor nanophosphor is located at or near a surfaceof the reflector.
 11. The light fixture of claim 1, wherein the macrooptic comprises a diffuse reflector forming an optical integratingcavity for optically integrating visible light produced by near UVexcitation of the at least one remote doped semiconductor nanophosphorto form the visible light output for the fixture.
 12. The light fixtureof claim 11, wherein: the macro optic comprises a light transmissivestructure having an optical volume, the structure having a contouredouter surface and an optical aperture surface; and the diffuse reflectorhas a highly reflective interior surface extending over at least asubstantial portion of the contoured outer surface of the lighttransmissive structure to form the optical integrating cavity to includethe optical volume of the light transmissive structure, a portion of theaperture surface of the light transmissive structure forming an opticalaperture of the cavity.
 13. The light fixture of claim 12, wherein aportion of the volume of the light transmissive structure contains amaterial including the at least one remote doped semiconductornanophosphor.
 14. The light fixture of claim 13, wherein the material isa liquid and the remote doped semiconductor nanophosphors are dispersedin the liquid.
 15. The light fixture of claim 11, further comprising apower supply for driving the solid state source to produce the near UVelectromagnetic energy.
 16. A light fixture for a general lightingapplication, comprising: at least one near ultraviolet (UV) solid statesource containing a semiconductor chip for producing near UVelectromagnetic energy in a range of 380-420 nm; a reflector having atleast one reflective surface forming an optical integrating cavity; alight transmissive structure at least substantially filing the opticalintegrating cavity, a portion of a surface of the light transmissivestructure forming an optical aperture of the optical integrating cavityto allow emission of light from the cavity for a light output of thefixture, the light transmissive structure being coupled to the solidstate source to receive the near UV electromagnetic energy from thesolid state source in a manner such that at least substantially alldirect emissions from the semiconductor chip reflect at least oncewithin the cavity; a material associated with the light transmissivestructure and apart from the semiconductor chip to receiveelectromagnetic energy from the semiconductor chip, the materialincluding at least one remote doped semiconductor nanophosphor of a typeexcited in response to near UV electromagnetic energy in the range of380-420 nm from the solid state source for re-emitting visible light ofa different spectrum.
 17. The light fixture of claim 16, wherein the atleast one remote doped semiconductor nanophosphor includes a pluralityof doped semiconductor nanophosphors.
 18. The lighting fixture of claim17, wherein: (a) the visible light output for the fixture from thecavity produced by the excitation of the semiconductor nanophosphors isat least substantially white; (b) the visible light output for thefixture from the cavity produced by the excitation of the semiconductornanophosphors has a color rendering index (CRI) of 75 or higher; and (c)the visible light output for the fixture from the cavity produced byexcitation of the doped semiconductor nanophosphors exhibits colortemperature in one of the following ranges: 2,725±145° Kelvin;3,045±175° Kelvin; 3,465±245° Kelvin; and 3,985±275° Kelvin.
 19. Thelight fixture of claim 18, wherein each semiconductor chip is configuredfor producing electromagnetic energy of 405 nm.
 20. The light fixture ofclaim 16, wherein the at least one solid state source is positioned andoriented relative to the light transmissive structure so that any nearUV electromagnetic energy reaching the optical aperture surface of thelight transmissive structure directly from the solid state sourceimpacts the optical aperture surface at a sufficiently small angle as tobe reflected back into the optical integrating cavity by total internalreflection at the optical aperture surface of the light transmissivestructure.
 21. The light fixture of claim 20, wherein the materialincluding the at least one remote doped semiconductor nanophosphor islocated at or near the optical aperture surface of the lighttransmissive structure.
 22. The light fixture of claim 16, wherein aportion of the volume of the light transmissive structure contains thematerial including the at least one remote doped semiconductornanophosphor.
 23. The light fixture of claim 22, wherein the material isa liquid and the at least one remote doped semiconductor nanophosphor isdispersed in the liquid.
 24. The light fixture of claim 16, wherein thedifferent spectrum has substantially no overlap with absorption spectraof the semiconductor nanophosphor, the semiconductor nanophosphorproducing visible light in the output for the fixture from the cavityaperture when excited.
 25. A light fixture for a lighting application,comprising: a solid state source, containing a semiconductor chip forproducing electromagnetic energy of a first spectral characteristic; amacro optic outside and coupled to the solid state source, for receivingand processing the electromagnetic energy to produce a light output forthe fixture; and at least one remote doped semiconductor nanophosphorassociated with the macro optic and apart from the semiconductor chip,the remote doped semiconductor nanophosphor being of a type excited inresponse to electromagnetic energy from the solid state source forre-emitting visible light of a second spectral characteristic.
 26. Thelight fixture of claim 25, wherein the solid state source comprises atleast one near ultraviolet (UV) solid state source for producing near UVelectromagnetic energy.
 27. The light fixture of claim 26, wherein thenear UV electromagnetic energy is in a range of 380-420 nm.
 28. Thelight fixture of claim 27, wherein the second spectral characteristichas substantially no overlap with absorption spectra of the dopedsemiconductor nanophosphor, the remote doped semiconductor nanophosphorproducing visible light in the output for the fixture from the fixturewhen excited.
 29. The light fixture of claim 28, wherein: (a) thevisible light in the output for the fixture produced by near UVexcitation of the remote doped semiconductor nanophosphors is at leastsubstantially white; (b) the visible light in the output for the fixtureproduced by near UV excitation of the remote doped semiconductornanophosphors has a color rendering index (CRI) of 75 or higher.
 30. Thelight fixture of claim 29, wherein the visible light in the output forthe fixture produced by near UV excitation of the remote dopedsemiconductor nanophosphor has a color temperature of one of thefollowing ranges: 2,725±145° Kelvin; 3,045±175° Kelvin; 3,465±245°Kelvin; and 3,985±275° Kelvin.
 31. A light fixture for a lightingapplication, comprising: a near ultraviolet (UV) solid state source,containing a semiconductor chip for producing near UV electromagneticenergy in a range of 380-420 nm; a macro optic outside and coupled tothe near UV solid state source, for receiving and processing the near UVelectromagnetic energy to produce a light output for the fixture; and atleast one remote doped semiconductor nanophosphor associated with themacro optic and apart from the semiconductor chip, the remote dopedsemiconductor nanophosphor being of a type excited in response to nearUV electromagnetic energy in the range of 380-420 nm from the solidstate source for re-emitting visible light of a different spectrum,wherein: (a) the visible light in the output for the fixture produced bynear UV excitation of the remote doped semiconductor nanophosphors is atleast substantially white; and (b) the visible light in the output forthe fixture produced by near UV excitation of the remote dopedsemiconductor nanophosphors has a color rendering index (CRI) of 75 orhigher.
 32. The light fixture of claim 31, wherein the visible light inthe output for the fixture produced by near UV excitation of the remotedoped semiconductor nanophosphor has a color temperature of one of thefollowing ranges: 2,725±145° Kelvin; 3,045±175° Kelvin; 3,465±245°Kelvin; and 3,985±275° Kelvin.